JANTXV2N6193-Transistor by JANTX | High-Power Switching Transistor | TO-220 Package

  • This transistor controls electrical signals efficiently, enabling precise amplification and switching in circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package reduces board space, allowing for more streamlined and space-saving device designs.
  • Ideal for use in power management systems, it enhances energy efficiency and thermal stability.
  • Manufactured to meet strict quality standards, it offers consistent reliability for long-term electronic applications.
Microchip Technology-logo
产品上方询盘

JANTXV2N6193-Transistor Overview

The JANTXV2N6193-Transistor is a high-performance NPN bipolar junction transistor designed for industrial and aerospace applications requiring enhanced reliability and superior electrical characteristics. Manufactured to stringent JAN (Joint Army-Navy) standards, this transistor offers robust operation at elevated voltages and currents, making it suitable for demanding environments. It features a collector-emitter voltage rating of 100V and a collector current capacity of 12A, ensuring efficient power handling. With its low saturation voltage and high gain bandwidth product, the device supports fast switching and amplification tasks. Engineers and sourcing specialists can rely on this transistor for durable and precise semiconductor solutions. For additional technical details and sourcing options, visit IC Manufacturer.

JANTXV2N6193-Transistor Key Features

  • High Collector Current Capacity: Supports up to 12A, enabling effective control of high-power loads.
  • Elevated Voltage Rating: Collector-emitter voltage of 100V provides reliability in high-voltage circuits.
  • Fast Switching Performance: Transition frequency (fT) of 5 MHz ensures rapid response times in switching applications.
  • Robust Thermal Handling: Maximum junction temperature of 200??C allows operation under harsh thermal conditions.
  • JAN Qualified Reliability: Meets military-grade standards, ensuring consistency and durability in critical systems.
  • Low Saturation Voltage: Minimizes power loss and improves overall circuit efficiency.
  • Complementary Package: TO-3 metal can package provides superior heat dissipation and mechanical stability.

JANTXV2N6193-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 12 A
Power Dissipation (PD) 115 W
Transition Frequency (fT) 5 MHz
DC Current Gain (hFE) 40?C160 ??
Junction Temperature (TJ) 200 ??C
Package Type TO-3 Metal Can ??

JANTXV2N6193-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage tolerance compared to standard commercial equivalents. Its military-grade qualification ensures enhanced reliability under extreme conditions, making it ideal for aerospace and defense applications. The low saturation voltage reduces switching losses, increasing energy efficiency and thermal performance. Additionally, its robust metal can package improves heat dissipation, extending operational lifespan when compared with plastic encapsulated transistors.

Typical Applications

  • High-power amplifier stages in industrial control systems, where high current and voltage handling are critical for performance and reliability.
  • Switching regulators and power supply circuits requiring fast switching speeds and efficient thermal management.
  • Military and aerospace electronic systems demanding components with proven environmental resilience and consistent electrical characteristics.
  • Motor control circuits in heavy machinery, leveraging the device??s high current capacity and rugged package design.

JANTXV2N6193-Transistor Brand Info

The JANTXV2N6193-Transistor is produced under stringent JAN standards, ensuring compliance with military and aerospace industry requirements. The brand emphasizes durability, reliability, and precise performance in harsh environments. This transistor is part of a trusted portfolio designed for engineers who prioritize quality and longevity in power semiconductor devices. Its manufacturing adheres to rigorous inspection and testing protocols, meeting exacting specifications essential for critical industrial applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current rating is 12 amperes, allowing the transistor to handle substantial load currents in power applications without compromising performance or reliability.

What package type does this transistor use, and why is it important?

This device is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical durability. This packaging is essential for maintaining reliable operation under high power dissipation and harsh environmental conditions.

Can this transistor operate at elevated temperatures?

Yes, the transistor supports a maximum junction temperature of 200??C, enabling it to function reliably in high-temperature environments typical in industrial and aerospace applications.

📩 Contact Us

产品中间询盘

How does the device??s voltage rating influence its application scope?

With a collector-emitter voltage rating of 100V and collector-base voltage of 120V, the transistor can be used in circuits requiring high-voltage tolerance, expanding its suitability for power amplifiers and switching circuits in demanding systems.

Is the transistor suitable for high-frequency switching applications?

The transition frequency of 5 MHz supports moderate high-frequency switching tasks, making it suitable for power conversion and signal amplification where fast response times are necessary.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?