MNS2N3501UB-Transistor by MNS | NPN Power Transistor | TO-220 Package

  • This transistor switches and amplifies electrical signals, enabling efficient control in electronic circuits.
  • Its voltage rating supports stable operation under varying power conditions, ensuring consistent performance.
  • The compact package design allows for board-space savings in dense circuit layouts.
  • Ideal for use in power management modules, it helps maintain system stability and reduces energy loss.
  • Manufactured to meet standard quality checks, it offers dependable operation over extended use.
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产品上方询盘

MNS2N3501UB-Transistor Overview

The MNS2N3501UB-Transistor is a high-performance bipolar junction transistor (BJT) designed for medium power amplification and switching applications. Engineered to provide reliable operation in a variety of industrial and electronic systems, this transistor offers robust electrical characteristics including a maximum collector current of 800mA and a collector-emitter voltage rating of 60V. Its complementary PNP configuration suits it for use in amplifier stages, driver circuits, and general-purpose switching where precise control and stable performance are essential. The device’s compact SOT-23 package facilitates easy integration on densely populated printed circuit boards. For detailed technical support and sourcing, visit IC Manufacturer.

MNS2N3501UB-Transistor Key Features

  • High collector current capacity: Supports up to 800mA, enabling efficient handling of medium power loads in switching and amplification tasks.
  • Moderate voltage rating: Collector-emitter voltage max of 60V provides ample headroom for common industrial and consumer electronics circuits.
  • Low saturation voltage: Minimizes power dissipation and heat generation, improving overall system efficiency and reliability.
  • SOT-23 surface-mount package: Streamlines PCB layout in compact designs and supports automated assembly processes.

MNS2N3501UB-Transistor Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction Transistor ?C
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 800 mA
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 100?C300 ?C
Power Dissipation (Pd) 350 mW
Package Type SOT-23 ?C
Transition Frequency 100 MHz

MNS2N3501UB-Transistor Advantages vs Typical Alternatives

This transistor distinguishes itself with a balanced combination of moderate voltage and current ratings, making it ideal for general-purpose medium power applications. Its low saturation voltage reduces conduction losses and heat buildup compared to many alternatives, enhancing energy efficiency and device reliability. Additionally, the compact SOT-23 package supports automated assembly and compact PCB designs, offering practical integration benefits over bulkier discrete transistors.

Typical Applications

  • Audio amplifier stages requiring stable gain and linearity for clear sound reproduction in compact consumer electronics.
  • General-purpose switching in industrial control circuits where reliable medium current handling is necessary.
  • Driver circuits for relays and small motors, leveraging its current capability and switching speed.
  • Signal amplification in sensor interfaces and low-power analog circuits within instrumentation systems.

MNS2N3501UB-Transistor Brand Info

The MNS2N3501UB-Transistor is offered by a reputable semiconductor manufacturer specializing in discrete components optimized for industrial and consumer electronics. This transistor reflects the brand??s commitment to quality, providing consistent electrical performance and robust packaging. Designed to meet rigorous manufacturing standards, the product supports a wide range of applications demanding reliable switching and amplification capabilities. Its availability in SOT-23 packaging aligns with modern surface-mount technology trends, ensuring seamless integration into automated production lines.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 800mA, enabling it to handle medium power loads in switching and amplification applications without compromising reliability.

What is the significance of the 60V collector-emitter voltage rating?

A 60V maximum collector-emitter voltage means the transistor can operate safely in circuits with supply voltages up to this level, providing flexibility for various industrial and consumer electronics applications.

How does the SOT-23 package benefit circuit design?

The SOT-23 package is a compact, surface-mount format that allows for high-density PCB layouts and supports automated pick-and-place assembly, reducing manufacturing costs and improving production efficiency.

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产品中间询盘

What type of transistor is this device, and why is that important?

This is a PNP bipolar junction transistor, which is essential for designing complementary amplifier stages and switching circuits that require PNP characteristics for proper operation and signal polarity.

Can this transistor be used in high-frequency applications?

With a transition frequency around 100MHz, the device is suitable for many moderate frequency applications including signal amplification and driver circuits, although it may not be optimal for very high-frequency RF designs.

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