2N3635L-Transistor Overview
The 2N3635L is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Offering robust electrical characteristics with a collector current rating suitable for medium power circuits, this transistor ensures reliable operation in various industrial and consumer electronics environments. Its complementary silicon structure allows for efficient signal amplification with a typical gain that supports linear and switching functions. Sourced from a trusted IC Manufacturer, the 2N3635L is engineered to deliver consistent performance with stable thermal and electrical parameters, making it an excellent choice for engineers and sourcing specialists focused on dependable semiconductor components.
2N3635L-Transistor Key Features
- High Collector Current Capacity: Supports up to 1.5 A collector current, enabling effective handling of medium power loads without compromising device integrity.
- Moderate Gain (hFE): Provides a current gain in the range suitable for amplification tasks, improving signal clarity and circuit responsiveness.
- Low Collector-Emitter Saturation Voltage: Enhances switching efficiency by minimizing power loss during saturation, increasing overall circuit efficiency.
- Robust Voltage Ratings: Withstands collector-emitter voltages up to 60 V, ensuring versatility across a range of power supply conditions.
2N3635L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 1.5 A (max) |
| Power Dissipation (Ptot) | 800 mW |
| DC Current Gain (hFE) | 30 to 300 (varies with IC) |
| Transition Frequency (fT) | 75 MHz (typical) |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Package Type | TO-18 Metal Can |
2N3635L-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage tolerance and collector current capability, surpassing many standard low-power transistors. Its low saturation voltage and robust gain ensure efficient switching and amplification with reduced power losses. Compared to typical alternatives, it provides enhanced thermal stability and reliability, making it well-suited for demanding industrial applications where consistent performance and longevity are critical.
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Typical Applications
- General-purpose amplifier circuits requiring medium power handling and reliable signal gain, such as audio preamplifiers and driver stages.
- Switching applications in power management circuits, including relay drivers and low-voltage switching tasks.
- Industrial control systems where robust transistor operation under varying voltage and current conditions is essential.
- Signal modulation and intermediate frequency amplification in communication devices and instrumentation.
2N3635L-Transistor Brand Info
The 2N3635L is offered by a reputable manufacturer known for high-quality discrete semiconductor components. This transistor is part of a well-established product line designed to meet rigorous industry standards for performance and reliability. The brand emphasizes consistent manufacturing processes and thorough testing to ensure each unit delivers dependable operation in a wide range of electronic circuits. Engineers and sourcing specialists trust this product for its proven track record in industrial and commercial applications.
FAQ
What is the maximum collector current for this transistor?
The 2N3635L can handle a maximum collector current of 1.5 A, making it suitable for medium power amplification and switching duties in various electronic circuits.
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What package type does this transistor come in?
This transistor is housed in a TO-18 metal can package, which offers good thermal conductivity and mechanical protection, suitable for environments requiring robust packaging.
Can this transistor be used for switching applications?
Yes, with a low collector-emitter saturation voltage and adequate current handling, the device is well-suited for switching applications such as driving relays or controlling low-voltage loads.
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What is the typical gain (hFE) range for this transistor?
The DC current gain for this device ranges from approximately 30 to 300 depending on the collector current, providing flexibility for different amplification needs.
What voltage ratings are important when integrating this transistor into a circuit?
Key voltage ratings include a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V, which define the maximum voltages the transistor can withstand during operation.
