2N3636L-Transistor by ON Semiconductor | NPN Power Transistor | TO-39 Package

2N3636L-Transistor Overview

The 2N3636L is a high-performance NPN silicon transistor designed for medium power amplification and switching applications. With its robust electrical characteristics, this transistor excels in linear amplifier stages and driver circuits, delivering reliable gain and stable operation across a broad frequency range. It features a collector current capability up to 1.5 A and a collector-emitter voltage rating suitable for diverse industrial needs. Engineered for durability and efficiency, the 2N3636L transistor supports applications requiring consistent performance under varying thermal and electrical stresses. For precision and adaptability in electronic design, sourcing from a trusted IC Manufacturer ensures quality and compliance.

2N3636L-Transistor Key Features

• High Collector Current: Supports up to 1.5 A, enabling robust power handling in amplification and switching circuits.
• Collector-Emitter Voltage Capability: Rated for up to 40 V, providing flexibility for medium voltage applications.
• Low Saturation Voltage: Reduces power dissipation and improves overall circuit efficiency.
• Reliable Gain Characteristics: Ensures consistent amplification with a DC current gain (hFE) ranging approximately between 30 and 100, supporting stable signal processing.

2N3636L-Transistor Technical Specifications

2N3636L-Transistor Advantages vs Typical Alternatives

This transistor offers superior collector current capacity and a higher power dissipation rating compared to many standard small-signal transistors. Its low saturation voltage improves energy efficiency, while stable gain characteristics enhance accuracy in signal amplification. The robust TO-18 package ensures improved heat dissipation and reliability under industrial operating conditions, making it preferable for demanding switching and amplification tasks over common plastic-encapsulated alternatives.

Typical Applications

• Audio amplifier stages where medium power gain and low distortion are essential for clear sound reproduction in industrial and consumer electronics.
• Switching regulators and power management circuits requiring reliable operation at moderate power levels.
• Driver stages for relay and solenoid control in automation and industrial control systems.
• General-purpose medium power transistor applications in instrumentation and measurement devices.

2N3636L-Transistor Brand Info

The 2N3636L transistor is a well-established semiconductor device widely sourced from reputable manufacturers specializing in discrete components. Known for its consistent quality and adherence to industry standards, this transistor is commonly offered by leading IC Manufacturer suppliers to ensure traceability and performance reliability. Its metal can TO-18 packaging is synonymous with ruggedness and long-term stability, making it a trusted choice for engineers requiring dependable transistor solutions in industrial and commercial electronic designs.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 1.5 amperes. This allows it to handle moderate power levels suitable for switching and amplification without risking damage under proper operating conditions.

What package type does the transistor use and why is it important?

This device uses a TO-18 metal can package, which provides superior thermal conductivity and mechanical durability compared to plastic packages. This enhances heat dissipation and reliability in harsh environments.

Can this transistor be used for high-frequency applications?

Yes, the transistor supports a transition frequency (fT) up to approximately 30 MHz, making it suitable for many medium-frequency analog circuits and signal processing tasks.

What is the typical DC current gain range for the 2N3636L transistor?

The typical DC current gain (hFE) varies between 30 and 100, depending on operating conditions. This range provides flexibility for different gain requirements in amplification circuits.

Is this transistor suitable for power switching applications?

With a collector-emitter voltage rating of 40 V and collector current capability of 1.5 A, this transistor can be effectively used in medium power switching applications, including relay drivers and power management circuits.