JANTX2N3636-Transistor by JAN | High-Power NPN Transistor | TO-3 Package

  • This transistor amplifies or switches electronic signals, enhancing circuit control and efficiency.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • Its compact package design allows efficient use of board space in tight electronic assemblies.
  • Ideal for audio amplifier circuits, it improves signal clarity and overall device responsiveness.
  • Manufactured with rigorous quality standards, it provides reliable and consistent long-term operation.
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产品上方询盘

JANTX2N3636-Transistor Overview

The JANTX2N3636 is a high-power NPN bipolar junction transistor (BJT) designed for demanding switching and amplification applications in military and industrial environments. It offers robust performance with a collector-emitter voltage rating of 100V and a collector current capacity of 20A, ensuring reliable operation under high-stress conditions. Featuring a complementary design for use with PNP transistors, this device supports high gain and low saturation voltage, making it suitable for power control circuits. Manufactured to rigorous military standards, the transistor guarantees durability and long-term reliability. For sourcing trusted components, visit IC Manufacturer.

JANTX2N3636-Transistor Key Features

  • High Collector Current (20A): Enables handling of substantial load currents, ideal for power amplifier and switching applications.
  • Collector-Emitter Voltage (100V): Supports high voltage operation, allowing use in circuits with demanding voltage requirements.
  • Low Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
  • Military-Grade Construction: Ensures ruggedness and reliability in harsh environments, meeting stringent quality standards.

JANTX2N3636-Transistor Technical Specifications

Parameter Value Unit
Polarity NPN
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 20 A
Power Dissipation (Ptot) 150 W
DC Current Gain (hFE) 40?C160
Transition Frequency (fT) 6 MHz
Operating Temperature Range -65 to +200 ??C

JANTX2N3636-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage tolerance compared to typical BJTs in its class, making it especially suited for high-current and high-voltage industrial applications. Its military-grade certification enhances reliability and longevity under extreme conditions, providing an edge over commercial-grade alternatives. The combination of low saturation voltage and stable gain ensures efficient switching and amplification with reduced thermal stress.

Typical Applications

  • Power Amplifiers: Used in high-power audio and RF amplification circuits requiring reliable linearity and current capacity.
  • Switching Regulators: Ideal for high-current switch-mode power supplies and voltage regulation systems.
  • Motor Control: Suitable for driving DC motors and actuators in industrial automation and aerospace systems.
  • Military Electronics: Deployed in rugged, high-reliability circuits demanding consistent performance over wide temperature ranges.

JANTX2N3636-Transistor Brand Info

The JANTX2N3636 is a military-approved transistor produced under strict quality controls to meet government and aerospace specifications. Designed for reliability and performance, it is widely recognized in defense and industrial sectors for its robustness and high power capability. Its brand heritage emphasizes longevity and consistent operation under harsh environmental stresses.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 20 amperes, which supports its use in high-power applications such as motor drives and power amplifiers.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it suitable for harsh industrial and military environments.

What is the significance of the low saturation voltage in this transistor?

A low saturation voltage reduces power dissipation during switching, which improves efficiency and helps maintain thermal stability within the device during high-current operation.

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产品中间询盘

Is this transistor suitable for RF amplification?

With a transition frequency of 6 MHz, it can be used in low to medium frequency RF amplification, but it is primarily designed for power and switching applications rather than high-frequency RF circuits.

How does the military-grade certification impact this transistor??s reliability?

Military-grade certification ensures that the transistor meets rigorous testing standards for durability, temperature tolerance, and electrical performance, resulting in enhanced reliability for critical applications.

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