JAN2N3637L-Transistor Overview
The JAN2N3637L is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Manufactured under the JAN (Joint Army-Navy) specification, this transistor offers military-grade reliability and consistency. Its medium power rating and high voltage capability make it ideal for use in demanding industrial and defense electronics environments. Featuring a complementary balance of gain and power dissipation, this device ensures stable operation under varied temperature conditions. Engineers and sourcing specialists can rely on this transistor for seamless integration into analog circuits requiring dependable linear or switching performance. For detailed specifications and sourcing, visit IC Manufacturer.
JAN2N3637L-Transistor Key Features
- High voltage tolerance: Supports collector-emitter voltages up to 100 V, enabling operation in high-voltage circuits without risk of breakdown.
- Robust current handling: Collector current rating up to 1.5 A ensures reliable performance in medium power amplification and switching tasks.
- Military-grade reliability: Constructed to JAN standards, guaranteeing functionality under harsh environmental conditions and extended lifecycle requirements.
- Moderate gain (hFE) range: Provides stable amplification with a DC current gain typically between 40 and 160, allowing precise control in analog signal processing.
JAN2N3637L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 100 | Volts |
| Collector-Base Voltage (VCBO) | 120 | Volts |
| Emitter-Base Voltage (VEBO) | 5 | Volts |
| Collector Current (IC) | 1.5 | Amperes |
| Power Dissipation (Ptot) | 30 | Watts |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Transition Frequency (fT) | 4 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
JAN2N3637L-Transistor Advantages vs Typical Alternatives
This transistor excels in military and industrial applications by combining high voltage and current ratings with a rugged construction compliant with JAN standards. Compared to typical commercial alternatives, it offers superior thermal stability and reliability under extreme conditions. Its moderate gain range and power dissipation capability enable efficient and precise switching or amplification, reducing the need for additional circuit protection. These features translate into enhanced system robustness and longer operational lifetimes in critical environments.
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Typical Applications
- Medium power analog signal amplification in communication and control systems requiring reliable gain and linearity over wide temperature ranges.
- Switching applications in industrial automation circuits where high voltage and current handling are necessary.
- Military-grade electronic assemblies demanding rugged transistors with strict quality and performance standards.
- General purpose amplification and switching in power supply regulation and driver circuits.
JAN2N3637L-Transistor Brand Info
The JAN2N3637L transistor is produced under stringent military specifications, ensuring a high level of performance consistency and durability. This product line is recognized for its adherence to quality controls that meet or exceed Department of Defense standards. The brand is synonymous with ruggedness and reliability, making it a preferred choice for defense contractors, aerospace engineers, and industrial equipment manufacturers. This transistor??s reputation is built on decades of proven service in harsh and mission-critical environments.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current rating is 1.5 A, which allows the transistor to handle moderate power loads in switching and amplification applications without damage under specified operating conditions.
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What voltage limits should be observed to prevent device failure?
The collector-emitter voltage should not exceed 100 V, the collector-base voltage should remain below 120 V, and the emitter-base voltage must be kept under 5 V to ensure safe and reliable operation.
Can this transistor operate in extreme temperature environments?
Yes, it is designed to function reliably within a temperature range of -65??C to +200??C, making it suitable for military and industrial applications exposed to harsh thermal conditions.
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What gain range can be expected from this transistor?
The DC current gain (hFE) typically ranges from 40 to 160, providing sufficient amplification for many analog and switching circuit designs requiring moderate gain.
Is the JAN2N3637L suitable for high-frequency applications?
With a transition frequency of approximately 4 MHz, this transistor is suited for low to moderate frequency applications but may not be optimal for high-frequency RF circuits requiring gigahertz-range performance.
