JAN2N3636L-Transistor by JAN – High-Power Amplifier Transistor, TO-3 Package

  • This transistor controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • Its compact package reduces board space, facilitating integration into size-constrained designs.
  • Ideal for switching applications, it enhances performance in power management and signal processing tasks.
  • Manufactured to meet industry standards, it offers consistent reliability over extended operating periods.
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JAN2N3636L-Transistor Overview

The JAN2N3636L transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. With a maximum collector current of 10A and a collector-emitter voltage rating of 100V, it offers reliable operation in demanding industrial environments. This device features a complementary balance of gain and power dissipation, making it suitable for power management and control circuits. Its JAN (Joint Army-Navy) designation ensures military-grade quality and durability, ideal for applications requiring extended reliability. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N3636L-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling efficient handling of power loads in industrial and automotive circuits.
  • Collector-emitter voltage rating of 100V: Ensures durability and stability under high-voltage operating conditions.
  • Military-grade reliability: JAN specification guarantees enhanced performance consistency and thermal stability for critical applications.
  • Low saturation voltage: Reduces power loss and improves overall circuit efficiency in switching applications.

JAN2N3636L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (PD) 65 W
Transition Frequency (fT) 10 MHz
DC Current Gain (hFE) 40?C160 ??
Junction Temperature (Tj) 200 ??C

JAN2N3636L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current capacity and voltage rating compared to typical small-signal transistors, providing enhanced reliability in power switching roles. Its military-grade JAN classification ensures stringent testing and quality control, delivering consistent performance under thermal and electrical stress. The low saturation voltage contributes to reduced power dissipation, improving energy efficiency in demanding industrial circuits.

Typical Applications

  • Power amplification in industrial control systems where robust current handling and voltage endurance are essential for reliable operation over extended periods.
  • Switching regulator circuits requiring efficient load control with minimal power loss.
  • Automotive electronics, particularly in ignition and relay driver circuits where durability and high current capacity are necessary.
  • Military and aerospace equipment benefiting from the JAN qualification for dependable performance in harsh environments.

JAN2N3636L-Transistor Brand Info

The JAN2N3636L transistor is a precision-engineered device meeting the stringent standards of the JAN (Joint Army-Navy) specification, signifying military-grade quality and reliability. Manufactured under rigorous quality assurance processes, it is trusted for high-stress applications demanding consistent electrical performance and thermal endurance. This product line is a core offering for engineers seeking dependable power transistors in both commercial and defense sectors.

FAQ

What does the JAN classification mean for this transistor?

The JAN classification indicates that the transistor complies with military standards for quality and reliability. This includes stringent testing for electrical parameters, temperature cycling, and mechanical durability, ensuring performance in critical defense and aerospace applications.

What is the maximum collector current rating of the device?

The transistor supports a maximum continuous collector current of 10 amperes, allowing it to handle significant load currents in power switching and amplification scenarios without degradation.

Can this transistor be used in high-frequency applications?

While the device has a transition frequency of approximately 10 MHz, it is primarily optimized for power switching and amplification rather than high-frequency RF applications. Designers should consider this when selecting components for RF circuits.

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产品中间询盘

What are the thermal limits of the transistor?

The maximum junction temperature rating is 200??C, allowing the transistor to operate safely under high power dissipation conditions with appropriate heat sinking and thermal management.

How does the low saturation voltage benefit my circuit design?

A low saturation voltage reduces the voltage drop across the transistor when it is fully on, minimizing power loss and heat generation. This improves overall efficiency and reliability of power switching circuits, especially in industrial and automotive applications.

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