2N4150-Transistor by ON Semiconductor | NPN Transistor | TO-92 Package

2N4150-Transistor Overview

The 2N4150 is an NPN bipolar junction transistor designed for low-power amplification and switching applications. Offering reliable performance with a maximum collector current of 100mA and a collector-emitter voltage rating of 40V, this transistor suits a wide range of electronic circuits where moderate gain and low noise are essential. Its medium gain bandwidth product and complementary electrical characteristics make it a versatile choice for signal amplification and switching tasks in consumer and industrial electronics. Available from IC Manufacturer, the 2N4150 provides proven reliability and consistent electrical parameters for engineers and sourcing specialists.

2N4150-Transistor Key Features

• Medium power amplification: Supports collector current up to 100mA, enabling effective signal amplification in low to moderate power circuits.
• Voltage handling capability: Collector-emitter voltage rating of 40V ensures suitability for various switching operations without breakdown risk.
• Low noise operation: Ideal for audio and signal processing circuits requiring minimal distortion and interference.
• Reliable gain characteristics: Provides a forward current gain (hFE) between 40 and 300, ensuring consistent amplification performance across devices.

2N4150-Transistor Technical Specifications

2N4150-Transistor Advantages vs Typical Alternatives

Compared to similar low-power transistors, this device offers a balanced combination of moderate voltage rating and current handling, paired with a high gain bandwidth product that supports efficient switching and amplification. Its low noise characteristics and stable gain range provide enhanced signal integrity, making it a preferred choice over generic transistors with less predictable performance or lower frequency response.

Typical Applications

• Audio preamplifiers where low noise and medium gain are critical for clear sound reproduction and minimal distortion.
• Switching circuits requiring reliable control of moderate current loads up to 100mA.
• Signal amplification in consumer electronics such as radios and small instrumentation devices.
• General-purpose amplification and switching in industrial control systems with moderate power requirements.

2N4150-Transistor Brand Info

The 2N4150 transistor is a widely recognized component manufactured under stringent quality standards by leading semiconductor producers. Its long-standing presence in the market reflects its trusted performance in both hobbyist and professional electronic designs. Packaged typically in a TO-18 metal can, the device ensures reliable thermal dissipation and mechanical durability, suitable for a variety of industrial and consumer applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 100mA, making it suitable for low to medium power applications such as signal amplification and switching tasks in various electronic circuits.

Can this transistor handle voltages above 40V?

No, the maximum collector-emitter voltage rating is 40V. Exceeding this voltage can lead to breakdown or permanent damage; therefore, it should be used within specified voltage limits.

What type of package does this transistor come in?

This transistor is typically supplied in a TO-18 metal can package, which offers good thermal conductivity and mechanical protection for the semiconductor die inside.

Is the 2N4150 suitable for high-frequency applications?

With a transition frequency of approximately 80MHz, this transistor supports moderate high-frequency operation, making it appropriate for many signal amplification and switching applications but not for very high-frequency RF circuits.

What is the typical gain range of this transistor?

The DC current gain (hFE) ranges from 40 to 300, providing flexibility in circuit design by accommodating a wide range of amplification needs with reliable performance.