JANTX2N4150S-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • It offers a high voltage rating, ensuring stable operation under demanding conditions.
  • The compact package design reduces circuit board space, supporting dense layouts.
  • Ideal for power regulation in automotive or industrial applications, improving overall system performance.
  • Manufactured to meet stringent quality standards, ensuring long-term reliability and durability.
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产品上方询盘

JANTX2N4150S-Transistor Overview

The JANTX2N4150S is a high-performance NPN bipolar junction transistor (BJT) designed for military and aerospace applications requiring stringent reliability and durability. With a maximum collector-emitter voltage of 60V and a collector current rating up to 10A, this transistor delivers robust switching and amplification capabilities. Its hermetically sealed metal can package ensures excellent thermal stability and long-term operational reliability under harsh environmental conditions. Ideal for high-reliability industrial systems, the device supports demanding power amplification and switching tasks. For more detailed product information, visit IC Manufacturer.

JANTX2N4150S-Transistor Key Features

  • High collector current rating: Supports up to 10A continuous collector current, enabling powerful switching and amplification in demanding circuits.
  • Voltage capability: Withstands collector-emitter voltages up to 60V, suitable for medium-power, high-voltage applications.
  • Hermetically sealed metal can package: Ensures superior thermal dissipation and environmental protection for enhanced reliability in aerospace and military systems.
  • Low saturation voltage: Enables efficient switching with minimal power loss, increasing overall circuit efficiency.

JANTX2N4150S-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN ?C
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 30 W
Transition Frequency (fT) 20 MHz
DC Current Gain (hFE) 40 to 160 ?C
Package Type Hermetic Metal Can (TO-39) ?C

JANTX2N4150S-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and power handling compared to typical commercial BJTs, making it ideal for critical aerospace and military applications. Its hermetically sealed package provides superior environmental resistance, while the high collector current capacity and voltage ratings ensure robust performance. The low saturation voltage also improves circuit efficiency, making this device a preferred choice for engineers requiring precision and durability under demanding conditions.

Typical Applications

  • Power amplification in military communication and radar systems, where high current handling and reliability are crucial.
  • Switching elements in aerospace avionics requiring stable operation under temperature extremes.
  • Industrial control circuits that demand robust transistor performance and long-term reliability.
  • High-reliability electronic assemblies in defense equipment with strict qualification standards.

JANTX2N4150S-Transistor Brand Info

The JANTX2N4150S transistor is part of a series of military-grade semiconductor devices manufactured under stringent quality controls to meet MIL-STD requirements. This product is designed and tested to deliver reliable performance in harsh environments, including extreme temperatures, vibration, and humidity. The brand is recognized for its commitment to precision engineering and durability, offering components essential for aerospace, defense, and high-reliability industrial electronics.

FAQ

What is the maximum collector current rating of the JANTX2N4150S transistor?

The maximum continuous collector current for this transistor is 10 amperes. This high current rating allows the device to handle demanding power switching and amplification tasks in industrial and military applications.

What package type does the JANTX2N4150S use, and why is it important?

This transistor is housed in a hermetically sealed metal can package (TO-39). This packaging ensures excellent thermal dissipation and environmental protection, which is critical for maintaining reliable operation under harsh conditions such as temperature extremes and mechanical stress.

Can this transistor operate at high voltages?

Yes, it supports a collector-emitter voltage of up to 60 volts and a collector-base voltage of 100 volts, making it suitable for medium-power applications requiring reliable switching and amplification at elevated voltages.

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产品中间询盘

What is the typical DC current gain range for this device?

The DC current gain (hFE) ranges between 40 and 160, providing flexibility in circuit design for amplification purposes. This range ensures sufficient gain for most power transistor applications while maintaining stability.

Is this transistor suitable for commercial consumer electronics?

While technically functional, this transistor is specifically designed and qualified for military and aerospace use, emphasizing reliability and durability over cost. For commercial consumer electronics, more cost-effective alternatives are typically preferred unless high reliability is essential.

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