2N3485A-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package ?C 2N3485A Brand

2N3485A-Transistor Overview

The 2N3485A transistor is a high-performance N-channel JFET designed for low noise and high gain applications. Featuring robust electrical characteristics and reliable switching performance, it is ideal for analog circuits requiring precision control. This transistor supports a maximum drain-source voltage of 30V and offers a low gate leakage current, making it well-suited for sensitive signal amplification and switching tasks. Its durable construction ensures stable operation across various environmental conditions. For comprehensive sourcing and technical support, visit IC Manufacturer.

2N3485A-Transistor Key Features

• Low Noise Operation: Ensures high signal integrity for sensitive analog and RF applications.
• High Gain Capability: Provides strong amplification, reducing the need for additional components and improving circuit efficiency.
• Wide Operating Voltage Range: Supports up to 30V drain-source voltage, offering flexibility in various circuit designs.
• Minimal Gate Leakage Current: Enhances reliability and accuracy in low current signal paths by minimizing unwanted leakage.

2N3485A-Transistor Technical Specifications

2N3485A-Transistor Advantages vs Typical Alternatives

This transistor stands out with its low noise figure and high gain, providing superior signal clarity compared to many general-purpose alternatives. Its low gate leakage current ensures minimal signal distortion, enhancing accuracy in sensitive circuits. Additionally, the wide voltage tolerance and stable power dissipation improve reliability and integration flexibility, making it a preferred choice for demanding analog and RF applications.

Typical Applications

• Low-noise preamplifiers in audio and RF signal processing where minimal distortion and high gain are critical.
• Voltage-controlled resistor circuits requiring precise control of resistance via gate voltage.
• Analog switches and chopper circuits that benefit from fast switching and low leakage currents.
• Sensor interface amplifiers used in industrial measurement systems demanding stable and accurate signal amplification.

2N3485A-Transistor Brand Info

The 2N3485A transistor is a widely recognized and trusted device manufactured under stringent quality standards. It is engineered to deliver consistent electrical performance and durability suitable for industrial, commercial, and scientific applications. This product has established itself as a reliable component in the semiconductor market, supported by comprehensive datasheets and technical documentation to assist engineers and sourcing specialists in effective integration.

FAQ

What type of transistor is the 2N3485A?

The 2N3485A is an N-channel Junction Field Effect Transistor (JFET) designed primarily for low noise and high gain applications. It operates by controlling current flow through a voltage applied at the gate terminal.

What is the maximum drain-source voltage for this transistor?

This device supports a maximum drain-source voltage (V_DS) of 30 volts, ensuring suitability for moderate voltage analog circuits and switch applications.

How does the 2N3485A perform in terms of gate leakage current?

The transistor features a very low gate leakage current, typically in the picoampere range, which improves signal accuracy and reduces power loss in sensitive electronic circuits.

Can this transistor be used in RF applications?

Yes, with a transition frequency around 30 MHz and low noise characteristics, it is well suited for RF amplifiers and low-noise preamplifier stages in communication equipment.

What are typical applications for this transistor?

Common uses include low-noise audio and RF preamplifiers, voltage-controlled resistors, analog switches, and sensor signal conditioning, where stable gain and minimal distortion are required.