JANTX2N2484-Transistor by JAN – High Power NPN Transistor, TO-66 Metal Package

JANTX2N2484-Transistor Overview

The JANTX2N2484 is a high-performance NPN silicon transistor specifically designed for reliable switching and amplification in demanding industrial and military applications. Engineered to meet stringent quality and durability standards, this transistor offers robust power handling capabilities and excellent gain characteristics. Its hermetically sealed metal can package ensures long-term stability and resistance to environmental stress. Ideal for high-reliability electronics, the JANTX2N2484 delivers consistent performance under elevated temperatures and harsh operating conditions. For sourcing and detailed specifications, refer to IC Manufacturer.

JANTX2N2484-Transistor Key Features

• High collector current rating: Supports up to 10A, enabling robust power switching applications with minimal thermal stress.
• Low saturation voltage: Ensures efficient conduction and reduces power loss, improving overall circuit efficiency.
• Hermetically sealed metal can package: Provides superior protection against moisture, contaminants, and mechanical damage, enhancing reliability in harsh environments.
• Wide operating temperature range: Suitable for use in extreme industrial and military environments, maintaining stable performance from -65??C to +200??C.

JANTX2N2484-Transistor Technical Specifications

JANTX2N2484-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high current capacity and robust power dissipation, making it suitable for heavy-duty switching tasks. Its hermetic metal package enhances long-term reliability compared to plastic-encapsulated alternatives. Additionally, the device maintains stable gain and low saturation voltage across wide temperature ranges, ensuring accuracy and efficiency in demanding industrial and military environments.

Typical Applications

• Power switching circuits in industrial control systems requiring high current and durability under harsh conditions.
• Amplifier stages in communication equipment where high gain and frequency response are critical.
• Military electronics demanding components with extended temperature tolerance and rugged packaging.
• High-reliability aerospace systems requiring components proven for long-term stability and performance.

JANTX2N2484-Transistor Brand Info

The JANTX2N2484 is part of a trusted line of military-grade transistors known for uncompromising quality and performance. Manufactured under stringent quality control and screening processes, this transistor meets the JAN (Joint Army-Navy) standards, ensuring suitability for defense and aerospace applications. Its design emphasizes ruggedness, reliability, and consistent electrical characteristics, making it a preferred choice for engineers sourcing components for mission-critical systems.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 10 amperes, allowing the transistor to handle substantial power loads in switching and amplification applications without degradation.

What packaging does the JANTX2N2484 use, and why is it important?

This device is housed in a hermetically sealed metal can package (TO-39), which protects the transistor from moisture, dust, and mechanical stress, enhancing reliability, especially in harsh industrial and military environments.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -65??C to +200??C, making it suitable for extreme temperature conditions often encountered in aerospace and military applications.

What is the typical saturation voltage of this transistor?

The saturation voltage (V_CE(sat)) is typically up to 1.5 volts at a collector current of 10 amperes, which contributes to efficient power switching with minimal losses.

Is this transistor suitable for high-frequency applications?

While optimized for power and reliability, the device features a transition frequency around 4 MHz, making it applicable for moderate frequency amplifier stages but not intended for very high-frequency RF circuits.