2N4150S-Transistor by ON Semiconductor – NPN Transistor, TO-92 Package

2N4150S-Transistor Overview

The 2N4150S transistor is a silicon NPN bipolar junction transistor designed for general-purpose amplifier and switching applications. It offers reliable performance with moderate current and voltage ratings, making it suitable for a variety of low-power electronic circuits. This transistor features a standard TO-92 package, ensuring easy integration into through-hole PCB layouts. Its stable gain and switching characteristics provide engineers with a versatile component for signal amplification and switching tasks in industrial and consumer electronics. For detailed product sourcing and technical support, visit the IC Manufacturer.

2N4150S-Transistor Key Features

• Moderate Collector Current Capacity: Supports a maximum collector current of 100mA, enabling effective control of low to medium power loads in electronic circuits.
• Collector-Emitter Voltage Rating: With a maximum collector-emitter voltage of 30V, it suits applications requiring moderate voltage handling without compromising device longevity.
• High DC Current Gain (hFE): Offers a gain range typically between 40 and 300, allowing for efficient amplification and improved signal integrity.
• Low Collector-Emitter Saturation Voltage: Ensures efficient switching with minimal voltage drop, thus enhancing power efficiency in switching applications.

2N4150S-Transistor Technical Specifications

2N4150S-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its balanced combination of voltage and current ratings suitable for moderate power applications. Its high current gain ensures efficient amplification, while the low saturation voltage enhances switching efficiency compared to typical alternatives. Additionally, the TO-92 package offers ease of handling and mounting, providing a reliable and cost-effective solution for designers focusing on low to medium power circuits.

Typical Applications

• Low noise amplifier stages in audio and signal processing circuits, benefiting from the transistor??s high gain and stable operation.
• Switching applications such as driving relays, LEDs, or small motors in industrial control systems.
• General-purpose amplification in consumer electronics, including portable devices and instrumentation.
• Signal modulation and buffering circuits where moderate frequency response and power dissipation are required.

2N4150S-Transistor Brand Info

The 2N4150S is a well-established transistor model offered by leading semiconductor manufacturers specializing in discrete components. Known for its reliability and consistent performance, this transistor is widely available and supported across global supply chains. The product is designed to meet standard industrial quality requirements, making it a trusted choice for engineers and sourcing specialists in diverse electronic design projects.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 100mA. This rating defines the highest continuous current the device can safely handle through its collector terminal without causing damage or performance degradation.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 50MHz, this device is suitable for low to moderate frequency applications. While it is not designed for very high-frequency RF circuits, it performs well in typical audio and signal amplification tasks.

What package type does this transistor come in?

The component is packaged in the TO-92 plastic housing, a standard through-hole format that facilitates easy mounting and prototyping on printed circuit boards.

Is this transistor suitable for switching applications?

Yes, its low collector-emitter saturation voltage and moderate power dissipation make it well-suited for switching loads such as relays, LEDs, and small motors in control circuits.

What typical gain values can be expected from this transistor?

The DC current gain (hFE) ranges from 40 to 300 depending on the operating conditions and specific device batch, providing flexibility in amplification across various circuit designs.