2N4033-Transistor by ON Semiconductor – High-Power NPN Transistor, TO-66 Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Its voltage rating supports stable operation in demanding environments, ensuring consistent performance.
  • The compact package design allows for easy integration, saving valuable board space in device layouts.
  • Ideal for switching applications, it helps manage power flow effectively in automated systems.
  • Manufactured with quality standards, it offers dependable operation over extended usage periods.
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2N4033-Transistor Overview

The 2N4033 transistor is a rugged, high-power NPN bipolar junction transistor designed for medium to high-voltage applications. With a collector-emitter voltage rating up to 160 V and a collector current capacity of 10 A, it is well-suited for power amplification and switching tasks in industrial electronics. Its robust construction and reliable electrical characteristics make it an excellent choice for engineers requiring durable, high-performance transistors. This device is compatible with a wide range of power circuits and can operate efficiently in demanding environments. For sourcing and detailed technical data, visit the IC Manufacturer portal.

2N4033-Transistor Key Features

  • High Collector Current Capability: Supports up to 10 amperes, enabling efficient handling of substantial load currents in power circuits.
  • Elevated Collector-Emitter Voltage: With a maximum rating of 160 V, it ensures reliable operation in medium-voltage applications without breakdown risk.
  • Robust Power Dissipation: The transistor can dissipate up to 125 watts, promoting thermal stability and long-term reliability under heavy loads.
  • Fast Switching Characteristics: Suitable for power switching applications, minimizing losses and improving overall circuit efficiency.

2N4033-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 160 V
Collector-Base Voltage (VCBO) 250 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 125 W
DC Current Gain (hFE) 20?C70 (typical)
Transition Frequency (fT) 3 MHz
Operating Junction Temperature (TJ) +200 ??C

2N4033-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and current ratings compared to many typical medium-power transistors. Its robust power dissipation capacity and reliable gain characteristics ensure enhanced performance in industrial switching and amplification tasks. The 2N4033??s rugged design improves long-term reliability under thermal stress, making it advantageous for engineers prioritizing durability and thermal management in demanding power electronics applications.

Typical Applications

  • Power Amplification: Ideal for audio and RF amplification circuits requiring medium to high voltage and current handling.
  • Switching Regulators: Used in power supply switching stages for efficient voltage regulation and control.
  • Motor Control Circuits: Suitable for controlling DC motors in industrial automation with high current demands.
  • General Purpose Power Switching: Effective in relay drivers and other electronic control circuits requiring robust switching components.

2N4033-Transistor Brand Info

The 2N4033 transistor is a well-established product widely available from multiple semiconductor manufacturers and distributors. Renowned for its durability and stable performance, it is a trusted solution in power transistor applications. The device??s legacy and proven specifications make it a reliable choice for engineers sourcing components for power electronics and industrial controls. Its standard packaging and compatibility with common circuit designs simplify integration into existing systems.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 10 amperes, allowing it to support high load currents typical in power switching and amplification applications.

Can this transistor operate at high temperatures?

Yes, it has an operating junction temperature rating up to 200??C, which provides good thermal stability and reliability in harsh or high-temperature environments.

Is the 2N4033 suitable for RF applications?

While it has a transition frequency of about 3 MHz, it is primarily designed for power amplification and switching rather than high-frequency RF applications.

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What packaging type does this transistor typically use?

The 2N4033 is commonly supplied in a standard TO-3 metal can package, which offers excellent heat dissipation and mechanical durability.

How does this transistor compare in gain to similar power transistors?

Its DC current gain ranges from 20 to 70, which is typical for power transistors designed for high current and voltage handling, balancing gain and robustness effectively.

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