2N720A-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

2N720A-Transistor Overview

The 2N720A transistor is a high-quality, low-power NPN bipolar junction transistor (BJT) widely used in switching and amplification circuits. Featuring reliable gain characteristics and low noise performance, this transistor is ideal for general-purpose applications in industrial and consumer electronics. Its robust design supports stable operation across a broad range of voltages and currents, making it an essential component for engineers seeking dependable transistor solutions. For detailed manufacturing and sourcing information, visit IC Manufacturer.

2N720A-Transistor Key Features

• Low collector cutoff current: Ensures minimal leakage current, enhancing circuit efficiency and reducing power loss in sensitive applications.
• Moderate current gain (hFE): Provides consistent amplification, critical for maintaining signal integrity in analog and switching circuits.
• High transition frequency (fT): Supports higher frequency operations, beneficial for applications requiring fast switching speeds and improved response.
• Wide voltage ratings: Allows reliable operation within various voltage environments without compromising device longevity or performance.

2N720A-Transistor Technical Specifications

2N720A-Transistor Advantages vs Typical Alternatives

This transistor offers superior low leakage current and a broad gain range compared to many standard small-signal transistors. Its ability to operate reliably under moderate voltage and current conditions with low noise makes it an efficient choice for amplification and switching. The combination of a high transition frequency and robust voltage ratings enhances performance and integration flexibility, offering engineers a reliable component for diverse circuits.

Typical Applications

• Low-level switching circuits where reliable switching performance and minimal leakage current are crucial for power savings and signal integrity.
• Amplification stages in audio or signal processing devices requiring stable gain and low noise characteristics.
• Oscillator circuits benefiting from high-frequency response and stable transistor parameters.
• General-purpose industrial control and instrumentation circuits that demand durable and consistent transistor operation.

2N720A-Transistor Brand Info

The 2N720A transistor is a well-established semiconductor device produced by reputable manufacturers specializing in discrete transistor components. It is recognized for its consistent performance and compliance with industry-standard specifications, making it a preferred choice for design engineers and sourcing specialists. The product is widely available through authorized distributors, ensuring quality assurance and supply chain reliability.

FAQ

What type of transistor is the 2N720A?

The 2N720A is an NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It features a moderate current gain and is suitable for general-purpose use in many electronic circuits.

What are the maximum voltage ratings for this transistor?

This transistor supports a collector-emitter voltage of up to 30 volts and a collector-base voltage of 60 volts, allowing it to operate safely within these voltage limits without damage.

Can the 2N720A be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, the transistor is capable of functioning effectively in circuits that require moderate to high switching speeds and frequency response.

What is the typical current gain range for this transistor?

The DC current gain (hFE) ranges from 40 to 300 depending on the operating conditions and test parameters, providing flexibility for various amplification needs.

Is the 2N720A suitable for power amplification?

This transistor is primarily intended for low-power applications with a maximum collector current of 0.1 A and power dissipation of 300 mW, making it more suitable for signal amplification and switching rather than high-power amplification.