2N5581-Transistor Overview
The 2N5581 is a high-voltage, NPN bipolar junction transistor designed for medium-power amplification and switching applications. Featuring a maximum collector-emitter voltage rating of 160 V and collector current up to 1.5 A, this transistor delivers robust performance in demanding industrial and electronic circuits. It offers reliable gain and switching characteristics, making it suitable for amplifier stages, voltage regulators, and general-purpose switching tasks. Manufactured to meet rigorous quality standards, the 2N5581 ensures consistent electrical parameters and dependable long-term operation. For sourcing and detailed technical information, visit IC Manufacturer.
2N5581-Transistor Key Features
- High voltage capability: With a maximum collector-emitter voltage of 160 V, it supports circuits requiring elevated voltage handling without breakdown.
- Moderate collector current: Rated for 1.5 A collector current, enabling reliable medium-power amplification and switching tasks in industrial controls.
- Low saturation voltage: Ensures efficient switching with reduced power loss, improving overall circuit energy efficiency.
- Stable gain (hFE): Offers a current gain range suitable for amplification applications, allowing predictable signal processing and control.
2N5581-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (Vceo) | 160 V |
| Maximum Collector-Base Voltage (Vcbo) | 160 V |
| Maximum Emitter-Base Voltage (Vebo) | 5 V |
| Maximum Collector Current (Ic) | 1.5 A |
| Power Dissipation (Pc) | 30 W |
| Transition Frequency (fT) | 30 MHz (typical) |
| Gain Bandwidth Product | 30 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 (depending on Ic) |
| Package Type | TO-18 Metal Can |
2N5581-Transistor Advantages vs Typical Alternatives
This transistor stands out with its high voltage rating of 160 V and robust collector current capacity of 1.5 A, which surpass many general-purpose transistors. Its low saturation voltage optimizes power efficiency in switching applications, and the stable gain characteristics offer precise control in amplification circuits. Compared to typical alternatives, it delivers enhanced reliability in industrial environments where voltage surges and thermal stresses are common, ensuring long-term operational stability.
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Typical Applications
- Medium-power amplifier stages in audio and signal processing systems where high voltage handling and stable gain are required.
- Switching regulators and power supply circuits that demand efficient transistor switching with minimal losses.
- Driver stages for relays, solenoids, and other electromechanical loads in industrial control systems.
- General-purpose switching and amplification in automotive electronics and instrumentation circuits.
2N5581-Transistor Brand Info
The 2N5581 is a legacy transistor model widely manufactured and stocked by numerous semiconductor suppliers, known for its durability and reliable performance in industrial and commercial electronics. It is typically offered in a TO-18 metal can package, providing excellent thermal dissipation and mechanical protection. This device is favored for applications requiring moderate power handling and high-voltage operation, supported by well-documented specifications from established semiconductor manufacturers.
FAQ
What is the maximum voltage rating of this transistor?
The transistor supports a maximum collector-emitter voltage (Vceo) of 160 volts. This high voltage rating allows it to operate safely in circuits subjected to elevated voltage levels without risk of breakdown.
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Can this transistor handle high current loads?
Yes, the device is rated for a maximum continuous collector current of 1.5 amperes, making it suitable for medium-power switching and amplification tasks in various electronic applications.
What package type does this transistor come in?
This transistor is commonly housed in a TO-18 metal can package, which offers robust mechanical protection and efficient heat dissipation, enhancing device reliability under thermal stress.
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Is this transistor suitable for high-frequency applications?
With a typical transition frequency (fT) of around 30 MHz, it can be used in moderate frequency amplification and switching circuits, though it is not intended for very high-frequency RF applications.
What are typical applications where this transistor excels?
The transistor excels in medium-power amplifier stages, switching regulators, relay drivers, and general-purpose switching in automotive and industrial control systems, leveraging its high voltage and current ratings.
