JAN2N2369A-Transistor Overview
The JAN2N2369A-Transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. Featuring a maximum collector current of 0.8A and a voltage rating of 40V, it delivers reliable operation in demanding environments. Its low noise figure and high gain bandwidth product make it ideal for precision signal processing. With a robust TO-18 metal can package, this transistor ensures enhanced thermal dissipation and mechanical durability. Engineers and sourcing specialists rely on this transistor for applications requiring dependable switching speed and stable gain performance. More details are available at IC Manufacturer.
JAN2N2369A-Transistor Key Features
- High current handling capability: Supports collector currents up to 0.8A, enabling efficient switching and amplification in medium-power circuits.
- Voltage tolerance: With a collector-emitter voltage rating of 40V, it suits various voltage domains, ensuring operational safety and durability.
- Low noise characteristics: Ideal for low-level analog signal amplification, improving signal integrity in sensitive electronic designs.
- Robust TO-18 packaging: Metal can construction enhances heat dissipation and mechanical reliability under harsh environmental conditions.
JAN2N2369A-Transistor Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V | Maximum voltage between collector and emitter |
| Collector Current (IC) | 0.8 | A | Maximum continuous collector current |
| Power Dissipation (PD) | 0.8 | W | Maximum power dissipation at 25??C |
| Gain Bandwidth Product (fT) | 150 | MHz | Frequency at which gain drops to unity |
| DC Current Gain (hFE) | 40-300 | ?? | Typical current gain range |
| Collector-Base Voltage (VCBO) | 60 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage between emitter and base |
| Transition Frequency (fT) | 150 | MHz | Maximum frequency for effective transistor operation |
JAN2N2369A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate current rating and high-frequency response, outperforming many general-purpose NPN transistors in signal fidelity and thermal reliability. Its robust metal package improves heat management compared to plastic encapsulated alternatives, while maintaining stable gain across temperature variations. The device??s low noise and consistent gain make it advantageous in precision analog circuits where performance consistency and durability are critical.
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Typical Applications
- Signal amplification in low noise analog circuits, including audio preamplifiers and instrumentation amplifiers, benefiting from the transistor??s high gain and low noise characteristics.
- Switching applications in industrial control systems requiring reliable operation under varying voltage and current loads.
- Driver stage in RF communication equipment, leveraging the high gain bandwidth product for effective high-frequency amplification.
- Military and aerospace electronics where rugged packaging and consistent electrical characteristics support demanding environmental requirements.
JAN2N2369A-Transistor Brand Info
The JAN2N2369A-Transistor is a military-grade semiconductor device produced under stringent quality standards to meet harsh environmental and reliability requirements. It is part of a legacy of JAN (Joint Army-Navy) certified components known for consistent performance in defense and aerospace applications. This transistor is manufactured to exacting specifications to ensure long-term stability and electrical integrity, making it a trusted choice for engineers designing mission-critical systems requiring dependable semiconductor components.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 0.8 amperes. This means the transistor can continuously handle up to 0.8A without damage, suitable for medium-power switching and amplification tasks.
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What type of transistor package does it use and why is it important?
The device is encapsulated in a TO-18 metal can package. This packaging enhances thermal dissipation and mechanical robustness, ensuring reliable operation in high-stress or high-temperature environments.
Can this transistor be used for high-frequency applications?
Yes, the transistor has a gain bandwidth product of approximately 150 MHz, making it suitable for moderate high-frequency amplification and switching, including RF driver stages and analog signal processing.
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What voltage ratings are specified for this transistor?
The transistor supports a maximum collector-emitter voltage of 40V, a collector-base voltage of 60V, and an emitter-base voltage of 5V, defining safe operating limits within typical industrial and military circuits.
Is this transistor suitable for low noise analog signal amplification?
Yes, the device features low noise characteristics, making it ideal for use in sensitive analog circuits such as audio preamplifiers and instrumentation amplifiers where signal integrity is critical.
