2N2369A-Transistor by ON Semiconductor – High-Speed Switching Transistor, TO-18 Package

2N2369A-Transistor Overview

The 2N2369A transistor is a high-speed, NPN bipolar junction transistor designed for low-power, general-purpose switching and amplification. Featuring a transition frequency (fT) of 150 MHz, it supports high-frequency operation suitable for RF and audio applications. Its low collector-emitter saturation voltage ensures efficient switching performance, making it ideal for fast switching circuits. The device??s robust design accommodates collector currents up to 600 mA and a collector-emitter voltage of 30 V, balancing power handling with compactness. For sourcing engineers and designers seeking reliable, high-speed transistor performance, this component provides a proven solution available through IC Manufacturer.

2N2369A-Transistor Key Features

• High transition frequency: With an fT of 150 MHz, it enables effective high-speed amplification and switching in RF and low-noise circuits.
• Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency and reducing heat dissipation.
• Moderate collector current handling: Supports up to 600 mA, suitable for a wide range of low to medium power applications without compromising reliability.
• Compact TO-18 package: Facilitates easy integration into densely packed circuit boards, maintaining thermal stability and mechanical robustness.

2N2369A-Transistor Technical Specifications

2N2369A-Transistor Advantages vs Typical Alternatives

Compared to typical small-signal transistors, this device delivers superior high-frequency response and lower saturation voltage, enabling faster switching and better linearity in RF and amplifier circuits. Its moderate power handling and compact packaging enhance reliability and integration flexibility, providing sourcing specialists and design engineers with a transistor that balances performance with efficiency and board space savings.

Typical Applications

• High-frequency switching circuits requiring rapid turn-on and turn-off times, such as RF oscillators and signal amplifiers, benefit from the transistor??s fast response and low saturation voltage.
• Low-noise audio amplifiers, where the transistor??s gain and frequency characteristics help maintain signal integrity.
• General-purpose amplification and switching in instrumentation and control systems demanding reliable performance under moderate power conditions.
• Driver stages in communication equipment that require a compact, high-speed transistor for effective signal processing.

2N2369A-Transistor Brand Info

The 2N2369A transistor is widely recognized and adopted across multiple semiconductor manufacturers, ensuring consistent quality and availability. Manufactured in a robust TO-18 metal can package, it has established itself as a dependable choice in industrial electronics for switching and amplification tasks. This product??s long-standing market presence confirms its suitability for engineers seeking a tested and reliable component with well-documented electrical characteristics.

FAQ

What package type does the 2N2369A transistor use?

The transistor is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection. This compact packaging facilitates easy integration into circuit boards, especially where space and heat dissipation are critical considerations.

What is the maximum collector current rating for this transistor?

The device can safely handle collector currents up to 600 mA. This moderate current rating makes it suitable for various low to medium power applications without risk of damage or performance degradation.

How does the transition frequency (fT) impact circuit performance?

The transition frequency of 150 MHz indicates the transistor??s capability to operate effectively at high frequencies. This makes it ideal for RF amplifiers, oscillators, and fast switching circuits, where rapid response and minimal signal distortion are essential.

Is the 2N2369A suitable for high-power applications?

While it offers moderate power dissipation up to 0.625 W, it is primarily intended for low to medium power applications. For high-power needs, other transistors with higher voltage and current ratings would be more appropriate.

What are the typical applications where this transistor excels?

This transistor is commonly used in high-frequency switching, low-noise audio amplification, driver stages in communication equipment, and general-purpose amplification circuits, leveraging its speed, gain, and efficient switching characteristics.