JANTXVK2N2484-Transistor High-Power Amplifier NPN Transistor in TO-3 Package by JANTX

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions.
  • The compact package reduces board space, allowing for more versatile and dense circuit designs.
  • Ideal for power management applications, it helps maintain consistent performance in variable loads.
  • Manufactured to meet rigorous quality standards, it offers reliable long-term operation in various environments.
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产品上方询盘

JANTXVK2N2484-Transistor Overview

The JANTXVK2N2484-Transistor is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications. Engineered for military and aerospace-grade reliability, this transistor offers superior gain characteristics and stable operation under demanding conditions. With a collector current rating of up to 15A and a collector-emitter voltage of 60V, it supports high power handling while maintaining efficiency. Its construction ensures low saturation voltage and fast switching speeds, making it ideal for industrial and defense electronics. Available through IC Manufacturer, this transistor meets stringent quality standards for critical applications.

JANTXVK2N2484-Transistor Key Features

  • High Collector Current Capacity: Supports continuous collector current up to 15A, enabling power-intensive switching tasks with reliability.
  • Robust Voltage Ratings: Collector-emitter voltage of 60V ensures stable operation in high-voltage circuits, protecting downstream components.
  • Low Saturation Voltage: Minimizes power losses during switching, improving overall energy efficiency in system designs.
  • Military-Grade Qualification: Constructed to meet strict standards for durability and performance in harsh environments.

JANTXVK2N2484-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current Continuous (IC) 15 A
Power Dissipation (Ptot) 125 W
DC Current Gain (hFE) 20?C70 ??
Transition Frequency (fT) 3 MHz
Operating Junction Temperature (TJ) ?65 to +200 ??C

JANTXVK2N2484-Transistor Advantages vs Typical Alternatives

This transistor excels in high-current and high-voltage applications compared to standard BJTs by offering enhanced gain and lower saturation voltage, which improves switching efficiency and thermal management. Its military-grade qualification guarantees superior reliability and extended temperature range operation, making it a preferred choice over typical commercial transistors in critical industrial and defense circuits.

Typical Applications

  • Power Amplification: Ideal for use in power amplifier stages where high current and voltage handling are essential for signal amplification with minimal distortion.
  • Switching Regulators: Suitable for DC-DC converters and switching power supplies requiring efficient high-speed switching and thermal endurance.
  • Motor Control Circuits: Enables precise control of motors in industrial automation systems due to its robust current capacity and reliable switching characteristics.
  • Defense Electronics: Its military-grade reliability makes it well-suited for avionics, radar systems, and other defense-related electronic equipment.

JANTXVK2N2484-Transistor Brand Info

The JANTXVK2N2484-Transistor is a legacy component from a trusted military and aerospace semiconductor product line. It is produced under rigorous quality control guidelines that ensure performance consistency in extreme environments. This transistor is designed to meet the demands of high-reliability sectors, combining rugged construction with stable electrical characteristics. It remains a benchmark device for engineers requiring dependable, high-power transistors for mission-critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 15 amperes, allowing it to handle high-power switching and amplification tasks reliably within its specified limits.

Can this transistor operate at high temperatures?

Yes, it is qualified to operate across a wide junction temperature range from ?65??C up to +200??C, making it suitable for applications in harsh or extreme thermal environments.

What voltage levels can this transistor tolerate?

The device has a collector-emitter voltage rating of 60 volts, a collector-base voltage rating of 100 volts, and an emitter-base voltage rating of 5 volts, ensuring robust performance in high-voltage circuits.

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产品中间询盘

How does the DC current gain impact circuit design?

The DC current gain (hFE) ranges between 20 and 70, providing adequate amplification while maintaining stable operation. This gain range assists engineers in designing biasing circuits and achieving desired amplification levels.

Is this transistor suitable for aerospace applications?

Absolutely. The transistor??s military-grade qualification and extended temperature range make it well-suited for aerospace and defense electronics, where reliability and performance are critical under demanding conditions.

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