JANTXVU2N3019S-Transistor Overview
The JANTXVU2N3019S transistor is a high-performance silicon NPN bipolar junction transistor designed for military and aerospace applications requiring ruggedness and reliability. It features a high voltage rating and enhanced gain characteristics, making it suitable for switching and amplification duties in harsh environments. Built to stringent JAN (Joint Army-Navy) standards, this transistor ensures consistent electrical performance and mechanical durability. Its robust construction supports operation over extended temperature ranges, providing engineers and sourcing specialists with a dependable component for critical industrial and defense systems. For detailed sourcing and technical support, visit IC Manufacturer.
JANTXVU2N3019S-Transistor Key Features
- High Voltage Tolerance: Supports collector-emitter voltages up to 100V, enabling use in high-voltage switching circuits.
- Enhanced Current Gain: Provides a minimum hFE of 40 at Ic=150mA, ensuring efficient signal amplification.
- Military-Grade Reliability: Meets JAN specifications for temperature and mechanical stress, enhancing long-term operational stability.
- Wide Operating Temperature Range: Functional from -55??C to +125??C, suitable for extreme environmental applications.
JANTXVU2N3019S-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 100 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 800 | mA |
| Power Dissipation (Pd) | 625 | mW |
| Gain Bandwidth Product (fT) | 50 | MHz |
| DC Current Gain (hFE) | 40 (min at Ic=150mA) | ?? |
| Operating Temperature Range | -55 to +125 | ??C |
JANTXVU2N3019S-Transistor Advantages vs Typical Alternatives
This transistor delivers superior voltage handling and stable gain across a broad temperature spectrum, outperforming typical commercial-grade devices. Its military-qualified design ensures enhanced reliability and ruggedness, reducing failure rates in critical circuits. The combination of robust electrical parameters and stringent quality standards makes it ideal where precision and durability are essential, offering engineers a reliable alternative for demanding industrial and defense applications.
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Typical Applications
- High-reliability switching and amplification in aerospace control systems, where stable performance under temperature extremes is critical.
- Military communication equipment requiring rugged transistor solutions with consistent gain characteristics.
- Industrial automation circuits that operate in harsh environments demanding durable semiconductor components.
- Signal processing modules in defense electronics, benefiting from the transistor??s high voltage and current capabilities.
JANTXVU2N3019S-Transistor Brand Info
The JANTXVU2N3019S transistor is produced under rigorous Joint Army-Navy (JAN) standards, known for ensuring exceptional quality and reliability in semiconductor devices. This product line targets sectors where failure is not an option, including aerospace, military, and industrial applications. Manufactured with stringent process controls, the transistor undergoes comprehensive testing to verify electrical performance and mechanical integrity, supporting long-term operational excellence. This brand??s commitment to durability and precision makes it a preferred choice for engineers and sourcing professionals managing mission-critical designs.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current for this device is 800mA, which allows it to handle moderate power levels in switching and amplification roles without compromising reliability.
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Can this transistor operate in extreme temperature environments?
Yes, it supports an operating temperature range from -55??C up to +125??C, making it suitable for environments with severe thermal fluctuations commonly found in defense and aerospace applications.
What voltage ratings does this transistor support?
This transistor supports a collector-emitter voltage of up to 100V, a collector-base voltage of 100V, and an emitter-base voltage of 5V, providing flexibility for various high-voltage circuit designs.
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How does the gain bandwidth product impact performance?
The gain bandwidth product of 50 MHz indicates the transistor can amplify signals effectively at relatively high frequencies, making it suitable for applications requiring fast switching and signal processing.
Is this transistor compliant with military standards?
Yes, the transistor is manufactured to meet JAN (Joint Army-Navy) military specifications, ensuring it adheres to strict guidelines for electrical performance, mechanical durability, and environmental resistance.
