JANTXVE2N3019S-Transistor by JANTXVE | High-Power Switching Transistor, TO-220 Package

JANTXVE2N3019S-Transistor Overview

The JANTXVE2N3019S is a high-performance NPN bipolar junction transistor designed for robust amplification and switching applications in industrial electronics. Featuring a collector-emitter voltage rating suitable for medium power circuits, this transistor ensures reliable operation under demanding conditions. Its complementary characteristics provide efficient current handling and gain stability, making it ideal for signal amplification and control in varied environments. Engineers and sourcing specialists benefit from its proven reliability and standardized package, facilitating seamless integration in precision analog and power control designs. For further technical details and sourcing, visit IC Manufacturer.

JANTXVE2N3019S-Transistor Key Features

• High collector-emitter voltage rating: Supports up to 80V, enabling operation in medium-voltage circuits without breakdown risk.
• Optimized current gain (hFE): Offers stable gain across a wide collector current range, ensuring consistent amplification performance.
• Robust power dissipation capability: Handles up to 1.5W, allowing efficient heat management in switching applications.
• Standard TO-39 metal can package: Enhances thermal conductivity and mechanical durability for industrial-grade reliability.

JANTXVE2N3019S-Transistor Technical Specifications

JANTXVE2N3019S-Transistor Advantages vs Typical Alternatives

This transistor delivers superior voltage tolerance and current gain stability compared to typical alternatives, enabling designers to achieve reliable switching and amplification with enhanced thermal endurance. Its rugged TO-39 package supports higher power dissipation and improved heat dissipation, resulting in longer operational life under industrial conditions. The combination of these features offers increased integration flexibility and dependable performance in critical electronic circuits.

Typical Applications

• Signal amplification in analog circuits where stable gain and medium voltage handling are essential for precise performance.
• Switching elements in power supply regulation and control systems requiring robust current and voltage ratings.
• Industrial automation circuits needing reliable transistor operation over a wide temperature range.
• Driver stages for relay and solenoid control in embedded systems and instrumentation.

JANTXVE2N3019S-Transistor Brand Info

The JANTXVE2N3019S transistor is a military-grade semiconductor device manufactured to meet rigorous quality and performance standards. Its design emphasizes durability and consistency, reflecting the brand??s commitment to supplying components suitable for demanding industrial and defense applications. This transistor is part of a trusted product line known for reliable electrical characteristics and mechanical robustness, ensuring confidence in long-term system integration.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this device is 3 amperes, allowing it to handle moderate power loads in switching and amplification roles without compromising performance.

Which package type does this transistor use and why is it important?

This transistor is housed in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical protection, making it suitable for high-reliability and high-temperature industrial environments.

Can this transistor operate at high frequencies?

With a transition frequency of approximately 25 MHz, it is suitable for many mid-frequency applications such as audio amplification and switching circuits but may not be ideal for very high-frequency RF applications.

What temperature range can this device reliably function within?

The junction temperature rating of up to +200??C ensures the transistor can operate reliably in harsh industrial environments where elevated temperatures are common.

Is this transistor suitable for low-voltage applications?

While optimized for medium-voltage use, the transistor can be used in low-voltage circuits; however, its key advantages lie in handling higher voltages and power dissipation more effectively than typical low-voltage transistors.