JANTXVE2N3019-Transistor by JANTXVE2 | High-Power Switching Transistor, TO-3 Package

JANTXVE2N3019-Transistor Overview

The JANTXVE2N3019 is a robust bipolar junction transistor designed for high-power amplification and switching applications. Built to meet stringent military and aerospace standards, this transistor offers reliable performance under demanding conditions, including high voltage and current scenarios. It features a silicon NPN structure with a collector-base voltage rating that supports heavy-duty operations. Ideal for engineers and sourcing specialists requiring durable and stable components, this device ensures longevity and consistent gain characteristics. For trustworthy procurement and detailed product support, consult IC Manufacturer.

JANTXVE2N3019-Transistor Key Features

• High Collector-Emitter Voltage: Withstands up to 100V, enabling use in circuits requiring significant voltage handling capabilities.
• Substantial Collector Current Capacity: Supports collector currents up to 8A, ensuring suitability for power amplification and switching tasks.
• Military-Grade Reliability: Designed and tested to meet strict military standards, guaranteeing performance in harsh environments and extended operational life.
• Silicon NPN Construction: Offers stable gain (hFE) and predictable switching behavior, facilitating precise control in analog and digital circuits.

JANTXVE2N3019-Transistor Technical Specifications

JANTXVE2N3019-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high voltage and current ratings combined with military-grade qualification, offering enhanced reliability compared to standard commercial transistors. Its wide operating temperature range and guaranteed gain parameters provide engineers with confidence in consistent performance under challenging conditions. Such attributes make it especially advantageous for precision amplification and robust switching applications where typical alternatives may falter in durability or electrical stability.

Typical Applications

• Power amplification in high-frequency RF circuits where stable gain and power handling are critical for signal integrity and system efficiency.
• Switching regulators and power supplies that demand reliable operation under high current and voltage loads.
• Military and aerospace electronic systems requiring components with stringent environmental and electrical performance standards.
• Industrial control systems involving heavy-duty switching and amplification functions with a focus on long-term reliability.

JANTXVE2N3019-Transistor Brand Info

The JANTXVE2N3019 transistor carries the JANTXVE series designation, indicating its compliance with military specifications for quality and performance. This brand is recognized for producing rugged semiconductor devices tailored for aerospace and defense applications. The product is built with rigorous testing protocols to ensure operational integrity in extreme environments. It is a trusted choice among engineers requiring dependable transistors that maintain consistent electrical characteristics throughout their service life.

FAQ

What type of transistor is the JANTXVE2N3019?

This device is a silicon NPN bipolar junction transistor designed primarily for high-power amplification and switching. Its construction and specifications make it suitable for demanding applications requiring stable gain and high voltage handling.

What are the maximum voltage ratings for this transistor?

The transistor supports a maximum collector-emitter voltage of 100 volts and a collector-base voltage of 120 volts, enabling it to operate safely in circuits with relatively high voltage demands.

Can the JANTXVE2N3019 handle high current loads?

Yes, it can handle collector currents up to 8 amperes, which makes it appropriate for power-intensive applications such as power amplifiers and switching power supplies.

What temperature range is suitable for operating this transistor?

The transistor is rated for junction temperatures from -65??C up to +200??C, allowing it to function reliably in both extremely cold and hot environments typical in military and industrial settings.

How does this transistor compare to commercial-grade alternatives?

Compared to commercial-grade transistors, this device offers enhanced durability and performance, especially under harsh environmental conditions and higher electrical stress, thanks to its design and military-grade qualification.