JANTXVK2N3057A-Transistor NPN Power Transistor – JANT Brand, TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient control of current flow in circuits.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • The compact package design allows for easy integration and conserves valuable PCB space.
  • Ideal for switching applications where precise signal modulation improves overall device performance.
  • Manufactured with rigorous quality controls to provide consistent reliability throughout its lifespan.
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JANTXVK2N3057A-Transistor Overview

The JANTXVK2N3057A transistor is a robust NPN bipolar junction transistor (BJT) designed for high-power switching and amplification applications. It features a high collector current rating and voltage tolerance, making it suitable for demanding industrial and military-grade circuits. This transistor delivers reliable performance under stringent operating conditions, including elevated temperatures and high voltages. With its complementary electrical characteristics and durable construction, it is ideal for use in power amplifiers, motor controls, and voltage regulators. Engineers and sourcing specialists can trust this component for long-term reliability and efficient integration into complex electronic systems. Available through IC Manufacturer, it supports critical industrial technology needs.

JANTXVK2N3057A-Transistor Key Features

  • High Collector-Emitter Voltage (VCEO): Rated up to 60V, enabling operation in high-voltage circuits without breakdown risk.
  • Collector Current Capacity: Supports continuous currents up to 15A, suitable for power-intensive applications where current handling is critical.
  • Low Saturation Voltage: Ensures efficient switching with minimal power loss, enhancing overall system efficiency.
  • Complementary Device: Matches well with complementary transistors for push-pull amplifier configurations.
  • Robust Package: Designed for reliable thermal dissipation and mechanical stability in harsh industrial environments.
  • High Gain (hFE): Provides strong amplification capability, important for signal fidelity and control precision.
  • Military-Grade Quality: Meets stringent standards for reliability, making it suitable for aerospace and defense electronics.

JANTXVK2N3057A-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 15 A continuous
Gain Bandwidth Product (fT) ?? 3 MHz
DC Current Gain (hFE) 20 to 70 (typical)
Power Dissipation (Ptot) 115 W (max)
Operating Junction Temperature -65??C to +200??C
Package Type TO-3 Metal Can

JANTXVK2N3057A-Transistor Advantages vs Typical Alternatives

This transistor offers superior current handling and high voltage tolerance compared to standard BJTs, ensuring reliable switching in rugged environments. Its low saturation voltage improves energy efficiency, reducing thermal stress on circuits. The military-grade construction enhances durability and operational stability under extreme temperatures. These advantages make it a preferred choice for engineers seeking a high-performance, long-lasting transistor for demanding industrial and defense applications.

Typical Applications

  • High-power audio amplifiers, where the transistor??s ability to handle large currents and voltages ensures clear signal amplification with minimal distortion.
  • Motor control circuits requiring robust switching components to manage inductive loads efficiently.
  • Voltage regulation and power supply circuits that depend on stable transistor performance under varying load conditions.
  • Industrial automation systems, benefiting from the device??s reliable operation at high temperatures and electrical stress.

JANTXVK2N3057A-Transistor Brand Info

The JANTXVK2N3057A transistor is produced to meet stringent military and industrial standards, ensuring superior reliability and performance. Its manufacturing adheres to rigorous quality controls designed to support critical electronics in harsh environments. This transistor is a trusted component within the JANTX series, known for its durability, thermal stability, and electrical robustness. It is widely adopted by engineers requiring dependable power transistors for mission-critical systems.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 15 amperes, making it suitable for high-power applications such as motor drives and power amplifiers.

Can this transistor operate at high temperatures?

Yes, it is rated for operation within a junction temperature range from -65??C up to 200??C, ensuring reliable performance in demanding thermal environments.

What package type does this transistor use, and why is it important?

This device is housed in a TO-3 metal can package, which provides excellent heat dissipation and mechanical protection, important for maintaining stability in power electronics.

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Is this transistor suitable for audio amplification applications?

Absolutely, the transistor??s high gain and current handling capabilities make it well-suited for audio power amplifier circuits requiring clean amplification and high output power.

How does the transistor??s voltage rating affect its application scope?

With a collector-emitter voltage rating of 60V and collector-base voltage up to 100V, this transistor can be deployed in circuits requiring high-voltage switching and amplification without risk of breakdown.

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