JANTXVK2N3700-Transistor by JAN | High-Power NPN Transistor | TO-66 Package

  • This transistor amplifies electronic signals, enabling efficient control in various circuits.
  • It supports high voltage operation, ensuring stable performance under demanding conditions.
  • The compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for switching applications, it enhances response time and energy efficiency in power management.
  • Manufactured under strict quality controls to provide consistent reliability throughout its lifecycle.
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JANTXVK2N3700-Transistor Overview

The JANTXVK2N3700-Transistor is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications requiring robust switching and amplification capabilities. Featuring a high voltage rating and reliable gain characteristics, this transistor excels in environments demanding durability and precision. Its rugged construction supports stable operation under elevated temperatures and electrical stress, making it suitable for power amplification and general-purpose switching. Sourced from a trusted IC Manufacturer, this device ensures compliance with stringent quality standards, delivering consistent performance in critical circuits.

JANTXVK2N3700-Transistor Key Features

  • High Voltage Handling: Supports collector-emitter voltages up to 100 V, enabling use in power control and amplification circuits requiring substantial voltage headroom.
  • Moderate Current Capability: Handles collector currents up to 0.8 A, suitable for medium power applications without compromising device longevity.
  • Stable Gain Characteristics: Offers a guaranteed DC current gain (hFE) range, facilitating predictable amplification in analog signal processing.
  • Enhanced Thermal Stability: Designed for operation up to 200??C junction temperature, ensuring reliability in harsh thermal environments.

JANTXVK2N3700-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Base Current (IB) 0.1 A
DC Current Gain (hFE) 40 ?C 300
Transition Frequency (fT) 40 MHz
Power Dissipation (Ptot) 12.5 W
Operating Junction Temperature (TJ) -65 to +200 ??C
Storage Temperature Range -65 to +200 ??C

JANTXVK2N3700-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard small-signal transistors, providing enhanced reliability in power switching and amplification tasks. Its wide operating temperature range and robust gain stability make it particularly advantageous in demanding industrial and military applications where consistent performance and thermal endurance are critical. The device??s proven design ensures seamless integration into legacy and modern circuits, reducing design risk and sourcing complexity.

Typical Applications

  • Power Amplification: Ideal for audio and RF amplifier stages requiring dependable gain and voltage handling in industrial control systems.
  • Switching Circuits: Utilized in relay drivers and general-purpose switching where moderate current and high voltage capability are essential.
  • Signal Processing: Suitable for analog signal conditioning circuits demanding stable transistor parameters over a wide temperature range.
  • Military and Aerospace Electronics: Designed to meet rigorous standards for high-reliability applications exposed to harsh environmental conditions.

JANTXVK2N3700-Transistor Brand Info

The JANTXVK2N3700-Transistor is a military-grade variant of the standard 2N3700 transistor, manufactured under strict quality controls to meet MIL-STD specifications. This device is produced by a reputable semiconductor manufacturer known for delivering dependable components tailored for aerospace, defense, and industrial markets. The brand emphasizes robust construction, consistent electrical characteristics, and rigorous testing to ensure suitability for critical system designs requiring longevity and stability.

FAQ

What is the maximum voltage rating for the JANTXVK2N3700-Transistor?

The transistor supports a maximum collector-emitter voltage of 100 volts, allowing it to operate safely in circuits with high voltage requirements. This rating ensures the device can handle voltage stresses typical in power amplification and switching applications.

Can this transistor operate at high temperatures?

Yes, it is rated for operation up to 200??C junction temperature, making it suitable for applications subjected to elevated thermal conditions. This thermal robustness enhances reliability in industrial and military environments.

What is the typical gain (hFE) range of this transistor?

The DC current gain ranges from 40 to 300, providing flexibility for various amplification needs. This range enables designers to achieve the desired signal amplification with predictable performance.

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Is this transistor suitable for RF applications?

With a transition frequency (fT) of 40 MHz, it is capable of handling moderate RF frequencies, making it appropriate for certain RF amplifier and switching applications where this bandwidth is sufficient.

What packaging and mounting considerations apply to this transistor?

The JANTXVK2N3700-Transistor is typically provided in a TO-39 metal can package, ensuring excellent thermal dissipation and mechanical durability. This packaging facilitates secure mounting on heat sinks or circuit boards in industrial assemblies.

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