JANTXVE2N2920L-Transistor by JANTXVE | High-Power Switching Transistor, TO-220 Package

  • This transistor provides efficient switching and amplification, enhancing circuit performance and control.
  • With a specified voltage rating, it ensures stable operation under expected electrical loads.
  • The compact package design optimizes board space, facilitating integration into dense electronic assemblies.
  • Ideal for use in power regulation circuits, it supports reliable energy management in various devices.
  • Manufactured to meet strict quality standards, it delivers consistent performance over extended use.
Microchip Technology-logo
产品上方询盘

JANTXVE2N2920L-Transistor Overview

The JANTXVE2N2920L is a high-reliability silicon NPN transistor designed to meet stringent performance requirements in military and industrial applications. This transistor offers robust power handling capabilities with a collector-emitter voltage of 250V and a collector current rating up to 15A, ensuring dependable operation under demanding conditions. Its complementary features include a high gain bandwidth product and low saturation voltage, supporting efficient switching and amplification tasks. With a rugged JEDEC registered TO-3 metal case, it provides enhanced thermal dissipation and mechanical strength. Engineers and sourcing specialists can rely on this device for high-power amplification and switching, available through IC Manufacturer.

JANTXVE2N2920L-Transistor Key Features

  • High collector current capacity: Rated for continuous collector current up to 15A, enabling high-power applications without compromising reliability.
  • Elevated breakdown voltage: Collector-emitter voltage of 250V supports high-voltage circuits and enhances operational safety margins.
  • Robust thermal design: TO-3 metal can package provides superior heat dissipation, ensuring stable performance under heavy loads.
  • Saturated low voltage drop: Low collector-emitter saturation voltage reduces power loss, improving overall circuit efficiency.

JANTXVE2N2920L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 250 V
Collector-Base Voltage (VCBO) 300 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current, Continuous (IC) 15 A
Power Dissipation (PD) 115 W
Gain Bandwidth Product (fT) 4 MHz
DC Current Gain (hFE) 20?C70 ??
Junction Temperature (TJ) 200 ??C

JANTXVE2N2920L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and current handling capabilities, making it ideal for power amplification and switching roles where typical alternatives may fall short. Its rugged metal TO-3 package enhances durability and thermal management compared to plastic-encapsulated devices. The low saturation voltage minimizes power dissipation, improving efficiency in systems requiring stable and reliable performance under harsh conditions.

Typical Applications

  • Power amplifier stages in audio and RF equipment, where high current and voltage ratings enable robust signal amplification with minimal distortion.
  • Switching regulators and power supply circuits demanding reliable transistor operation under high load conditions.
  • Industrial control systems requiring durable transistors capable of handling transient voltage and current spikes.
  • Military and aerospace electronic systems where ruggedness and long-term reliability are critical for mission success.

JANTXVE2N2920L-Transistor Brand Info

The JANTXVE2N2920L is a premium transistor manufactured under stringent quality controls, typically associated with military-grade JEDEC standards. This device is known for its consistent performance and durability in demanding environments. Designed to meet or exceed industry specifications, it is commonly sourced by engineers and procurement specialists for applications that require dependable, high-power semiconductor components. The brand emphasizes reliability and thermal stability, making it a trusted choice for critical electronics.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current rating is 15 amperes. This high current capability allows the transistor to be used effectively in power-intensive applications without risk of damage under specified operating conditions.

What packaging does this transistor use, and why is it important?

This transistor is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical strength. This packaging helps dissipate heat efficiently and protects the device in harsh environments, enhancing reliability.

Can this transistor handle high voltages in industrial applications?

Yes, with a collector-emitter voltage rating of 250 volts and collector-base voltage of 300 volts, it is well-suited for use in industrial circuits that require operation at elevated voltages, ensuring safe and stable performance.

📩 Contact Us

产品中间询盘

What is the typical gain bandwidth product, and how does it affect performance?

The gain bandwidth product is approximately 4 MHz, which indicates the transistor’s capability to amplify signals effectively at moderate frequencies, making it appropriate for audio and some RF power amplification tasks.

Is this transistor suitable for military or aerospace applications?

Indeed, the transistor meets military JEDEC standards and is designed for rugged environments, making it suitable for aerospace and defense electronics where reliability, durability, and performance consistency are critical.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?