JANTXVE2N2919U-Transistor Power Amplifier Transistor in TO-3 Package by JANTXVE

  • This transistor amplifies electrical signals, enabling efficient signal control in various circuits.
  • Its maximum voltage rating ensures operation within safe limits, preventing device failure under load.
  • The compact package design reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for switching applications, it enhances performance by providing fast and reliable signal modulation.
  • Manufactured to meet industry standards, it offers consistent reliability across diverse operating conditions.
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产品上方询盘

JANTXVE2N2919U-Transistor Overview

The JANTXVE2N2919U transistor is a high-performance NPN bipolar junction transistor designed for reliable amplification and switching in demanding industrial applications. It features robust voltage and current handling capabilities, making it suitable for medium-power circuits requiring stable operation under varying load conditions. This transistor offers dependable gain characteristics and low noise, supporting precision signal processing and power regulation tasks. Engineered for durability and consistent performance, it is an ideal component for engineers and sourcing specialists seeking a proven solution in power amplification and control systems. For detailed sourcing and support, visit IC Manufacturer.

JANTXVE2N2919U-Transistor Key Features

  • High Voltage Tolerance: Supports collector-emitter voltages up to 60 V, enabling use in circuits with substantial voltage swings.
  • Moderate Collector Current Capacity: Handles continuous collector currents up to 800 mA, suitable for medium-power applications requiring reliable current flow.
  • Stable Gain Bandwidth: Provides consistent current gain (hFE) in the range of 40 to 140, ensuring predictable amplification performance.
  • Robust Package and Thermal Characteristics: Encapsulated in a TO-18 metal can package, offering improved heat dissipation and mechanical durability for industrial environments.

JANTXVE2N2919U-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 800 mW
Current Gain (hFE) 40 to 140 ??
Transition Frequency (fT) 30 MHz
Operating and Storage Junction Temperature (Tj, Tstg) -65 to +200 ??C

JANTXVE2N2919U-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage endurance and current capacity that surpasses many standard NPN transistors in similar power classes. Its metal can packaging enhances thermal management and mechanical robustness compared to plastic-encapsulated alternatives. The wide operating temperature range and reliable gain characteristics make it a preferred choice for applications demanding consistent performance under stress and environmental variations.

Typical Applications

  • Medium-power amplifier stages in industrial control systems, where stable gain and thermal reliability are essential for signal integrity.
  • Switching applications in power regulation circuits requiring high voltage tolerance and moderate current handling.
  • Signal processing circuits in instrumentation that benefit from low noise and predictable transistor behavior.
  • General-purpose amplification in audio and communication devices operating in rugged environments.

JANTXVE2N2919U-Transistor Brand Info

The JANTXVE2N2919U transistor is distributed under a brand recognized for delivering high-reliability semiconductor components tailored for industrial and military-grade electronics. This product line emphasizes rigorous quality control and consistent manufacturing standards, ensuring dependable electrical characteristics and long-term durability. The transistor??s design and packaging reflect a commitment to meeting strict environmental and performance requirements demanded by critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current is specified at 800 mA, which allows the device to operate reliably in medium-power switching and amplification circuits without exceeding thermal limits.

What is the operating temperature range of the transistor?

This transistor supports a wide operating and storage junction temperature range from -65??C to +200??C, making it suitable for harsh industrial environments and applications requiring broad temperature tolerance.

How does the metal can package benefit the transistor??s performance?

The TO-18 metal can package provides superior heat dissipation compared to plastic alternatives, enhancing thermal stability and mechanical protection. This packaging ensures reliable operation over extended periods in demanding conditions.

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产品中间询盘

What are typical applications suited for this transistor?

Typical applications include medium-power amplification, switching in voltage regulation circuits, signal processing in instrumentation, and general-purpose amplification where stable gain and durability are required.

What is the typical gain bandwidth of this transistor?

The typical transition frequency (fT) is approximately 30 MHz, supporting moderate frequency amplification tasks and ensuring effective performance in various analog and switching circuits.

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