JANTXVK2N2919-Transistor Overview
The JANTXVK2N2919 transistor is a high-performance silicon NPN bipolar junction transistor designed for amplification and switching applications in industrial electronics. Engineered to handle medium power levels with reliable gain characteristics, it provides consistent operation in demanding environments. Its robust construction ensures dependable switching speeds and thermal stability, making it suitable for use in power amplifiers, driver stages, and general-purpose signal amplification. Manufactured under rigorous military standards, this transistor delivers durability and precision for engineers and sourcing specialists seeking a trusted component from a reputable IC Manufacturer.
JANTXVK2N2919-Transistor Key Features
- High current handling capability: Supports collector currents up to 800 mA, enabling efficient power amplification and switching in medium-power circuits.
- Collector-emitter voltage rating: With a maximum voltage rating of 40 V, it provides reliable operation under moderate voltage conditions.
- Gain bandwidth product: Ensures stable gain across a wide frequency range, critical for signal amplification and frequency response in analog applications.
- Robust packaging: Hermetically sealed TO-18 metal can package enhances thermal dissipation and mechanical durability for long-term reliability.
JANTXVK2N2919-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 800 | mA |
| Power Dissipation (PD) | 625 | mW |
| DC Current Gain (hFE) | 40 to 300 | (unitless) |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 Metal Can | – |
JANTXVK2N2919-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and thermal stability compared to typical alternatives, making it ideal for industrial-grade applications. Its moderate voltage and current ratings balance power handling with efficiency, while the hermetically sealed metal can package provides superior protection against environmental factors and mechanical stress. These characteristics contribute to improved long-term performance and lower failure rates in demanding electronic systems.
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Typical Applications
- Signal amplification in audio and intermediate frequency stages where medium power gain and linearity are essential for clear signal processing.
- Switching applications in control circuits requiring reliable operation at moderate currents and voltages.
- Driver stages in power amplifier designs, facilitating efficient current delivery to subsequent circuit components.
- General-purpose amplification tasks in industrial instrumentation and communication equipment.
JANTXVK2N2919-Transistor Brand Info
The JANTXVK2N2919 is a military-grade transistor produced under stringent quality control standards, ensuring high reliability and performance for critical applications. Recognized for its robust construction and precision manufacturing, this product is widely utilized in aerospace, defense, and industrial sectors where component integrity and longevity are paramount. Its brand reputation is built on delivering consistent semiconductor solutions that meet rigorous operational demands.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current for this transistor is 800 mA, enabling it to handle moderate power loads typical in amplification and switching applications.
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What package does this transistor come in, and why is it important?
It is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, enhancing reliability especially in harsh or high-temperature environments.
Can this transistor be used for high-frequency applications?
With a transition frequency of approximately 100 MHz, it is suitable for moderate high-frequency applications such as audio and intermediate frequency amplification but may not be ideal for very high-frequency RF circuits.
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What voltage levels can this transistor safely operate at?
The device supports a collector-emitter voltage of up to 40 V and collector-base voltage up to 75 V, accommodating a range of moderate voltage industrial and military circuits.
How does this transistor compare in reliability to plastic-encapsulated alternatives?
Due to its hermetically sealed metal can packaging, this transistor offers superior protection from moisture, contaminants, and mechanical stress, resulting in higher reliability and longer operational life than standard plastic-encapsulated transistors.







