JANTXVU2N2484UB-Transistor by JANTXVU | High-Speed Switching Transistor, TO-220 Package

  • This transistor controls current flow effectively, enabling precise switching and amplification in circuits.
  • A key specification ensures stable operation under varying electrical conditions, enhancing circuit performance.
  • The compact package type reduces board space requirements, facilitating design in tight layouts.
  • Ideal for signal processing in communication devices, improving overall system responsiveness and efficiency.
  • Manufactured to meet industry standards, ensuring consistent reliability and long-term operational stability.
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JANTXVU2N2484UB-Transistor Overview

The JANTXVU2N2484UB transistor is a high-performance bipolar junction transistor (BJT) designed for rugged and reliable operation in demanding industrial and military applications. This silicon NPN transistor features a robust collector-emitter voltage rating and a controlled gain characteristic, ensuring stable switching and amplification under varying conditions. Manufactured according to stringent military standards, it offers exceptional durability, making it suitable for harsh environments where reliability is critical. Engineers and sourcing specialists can trust this device for precision control in power regulation, signal amplification, and switching circuits. For more detailed component sourcing, visit IC Manufacturer.

JANTXVU2N2484UB-Transistor Key Features

  • High Voltage Rating: With a collector-emitter voltage rating of 60V, this transistor supports robust voltage handling, enabling use in power management circuits.
  • Moderate Gain (hFE): The transistor??s current gain is optimized for linear amplification, providing precise signal fidelity critical in analog stages.
  • Military-Grade Reliability: Built to MIL-STD-750 standards, it ensures operational stability and long-term reliability in demanding environments.
  • Low Noise Characteristics: Suitable for low-level signal amplification, reducing interference and enhancing system performance.

JANTXVU2N2484UB-Transistor Technical Specifications

Parameter Value Unit
Type NPN Silicon BJT ?C
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (PC) 1 W
DC Current Gain (hFE) 40 ?C 160 ?C
Transition Frequency (fT) 100 MHz
Operating Temperature Range -55 to +200 ??C
Package Type TO-18 Metal Can ?C

JANTXVU2N2484UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage tolerance and thermal stability compared to standard commercial BJTs, making it ideal for high-reliability applications. Its military-grade certification guarantees performance consistency under extreme environmental stress, which typical alternatives may not provide. The broad gain range and low noise enable precise amplification and switching, enhancing circuit accuracy and efficiency in critical industrial and defense systems.

Typical Applications

  • Signal amplification in high-frequency analog circuits, where low noise and stable gain are essential for maintaining signal integrity over long-term operation.
  • Switching elements in power regulation circuits, leveraging its high collector current and voltage ratings to manage moderate power loads effectively.
  • Military and aerospace electronic systems requiring components with extended temperature ranges and ruggedized packaging for reliable field performance.
  • Industrial control systems where consistent transistor behavior under thermal stress ensures stable machine operation and safety.

JANTXVU2N2484UB-Transistor Brand Info

The JANTXVU2N2484UB transistor is produced under stringent manufacturing standards to meet military and industrial quality levels. Designed for applications demanding high reliability and performance, this product line is recognized for its robust construction and consistent electrical characteristics. The transistor??s TO-18 metal can package ensures excellent thermal dissipation and mechanical protection, aligning with the brand??s commitment to durability in harsh operating conditions.

FAQ

What voltage ranges can the JANTXVU2N2484UB transistor safely operate within?

The device supports a maximum collector-emitter voltage of 60 volts and a collector-base voltage up to 100 volts, making it suitable for medium-voltage applications that require reliable switching and amplification without breakdown risks.

How does this transistor perform in high-temperature environments?

It operates reliably across a temperature range from -55??C to +200??C, ensuring stable performance in extreme conditions, which is critical for military and industrial applications where temperature fluctuations are common.

What makes this transistor suitable for military applications?

The transistor complies with MIL-STD-750 standards, indicating it has undergone rigorous testing for parameters like thermal shock, vibration, and electrical performance, ensuring durability and consistent operation in defense systems.

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Can the transistor handle high-frequency signals effectively?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is capable of functioning efficiently in RF and high-frequency analog circuits, providing good gain and low noise at these frequencies.

What packaging does this transistor use, and how does it affect its application?

The TO-18 metal can package offers excellent mechanical protection and superior thermal dissipation compared to plastic packages, making it ideal for applications where durability and heat management are priorities.

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