JANSU2N3700UB-Transistor Overview
The JANSU2N3700UB transistor is a robust bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It offers reliable electrical performance with a focus on high current handling and voltage tolerance, making it ideal for industrial and consumer electronics. This transistor features a complementary NPN configuration with a collector-emitter voltage rating suited for diverse circuit designs. Manufactured with precision, it ensures consistent operation under varied thermal and electrical stresses. Engineers and sourcing specialists will appreciate its balance of gain, voltage, and current capabilities, enhancing circuit efficiency and durability. For more details, visit the IC Manufacturer.
JANSU2N3700UB-Transistor Key Features
- High voltage tolerance: With a collector-emitter maximum voltage rating of 60V, this transistor supports applications requiring reliable switching at elevated voltages.
- Significant collector current capacity: The device can handle collector currents up to 800mA, enabling effective control in moderate power circuits.
- Stable gain characteristics: Its current gain (hFE) range from 40 to 300 ensures versatile amplification, suitable for signal and power stages alike.
- Thermal reliability: The 150??C maximum junction temperature rating ensures dependable operation in demanding thermal environments.
JANSU2N3700UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 75 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 40 to 300 | ?? |
| Junction Temperature (Tj) | 150 | ??C |
JANSU2N3700UB-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of voltage rating and current capacity compared to many standard NPN BJTs in its class. Its high gain and thermal tolerance provide engineers with enhanced design flexibility, improving circuit accuracy and reliability. The broad hFE range supports diverse applications without compromising efficiency, making it a preferred choice over typical alternatives with lower power ratings or narrower operating conditions.
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Typical Applications
- Signal amplification in audio and intermediate frequency stages, benefiting from its stable gain and moderate power handling capabilities.
- Switching applications in control circuits, where its voltage and current ratings ensure reliable operation.
- Driver stages for relay and low-power motor control, utilizing its robust collector current capacity.
- General-purpose amplification and switching in consumer electronics and industrial control systems requiring durable transistor components.
JANSU2N3700UB-Transistor Brand Info
The JANSU2N3700UB transistor is part of the JANSU semiconductor product line, recognized for its commitment to quality and performance in the field of bipolar junction transistors. This device embodies the brand??s focus on delivering reliable, high-performance components that meet stringent industrial and commercial standards. JANSU??s extensive quality assurance processes and modern fabrication techniques ensure consistent product reliability, making this transistor a trusted component for engineers worldwide.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current (Ic) for this device is 800mA. This allows it to handle moderate power levels suitable for switching and amplification tasks in various electronic circuits without risk of damage under normal operating conditions.
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Can the transistor operate at high temperatures?
Yes, the transistor supports a maximum junction temperature (Tj) of 150??C, making it suitable for applications where thermal stress is a concern. Proper heat sinking and circuit design will ensure safe operation within this limit.
What type of transistor is the JANSU2N3700UB?
This is an NPN bipolar junction transistor (BJT), commonly used for amplification and switching purposes in electronic circuits. Its complementary device type and ratings make it versatile for general-purpose industrial applications.
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What voltage levels can the transistor withstand?
The transistor can tolerate a collector-emitter voltage (Vceo) of up to 60V and a collector-base voltage (Vcbo) up to 75V, providing flexibility for use in circuits with moderate to high voltage requirements.
Is this transistor suitable for audio amplification applications?
Yes, due to its stable current gain (hFE) and frequency characteristics, this transistor is well-suited for audio and intermediate frequency amplification stages, delivering reliable performance with minimal distortion.
