JANTXVK2N2221AUB-Transistor by JAN | High-Power Switching Transistor | TO-3 Package

  • Acts as a high-speed switching device, enabling efficient signal amplification and control in circuits.
  • Features a voltage rating suited for demanding environments, ensuring stable operation under varying loads.
  • Designed in a compact package, it offers board-space savings critical for dense electronic assemblies.
  • Ideal for use in power management systems, improving energy efficiency and thermal performance.
  • Manufactured to rigorous standards, providing consistent reliability and long operational lifespan.
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产品上方询盘

JANTXVK2N2221AUB-Transistor Overview

The JANTXVK2N2221AUB transistor is a high-performance, silicon NPN bipolar junction transistor designed for medium power amplification and switching applications. This device offers reliable operation with a collector current rating suitable for a wide range of industrial electronics projects. It features a robust gain bandwidth product and collector-emitter voltage ratings that ensure stable performance in demanding environments. The transistor’s construction supports efficient signal amplification and switching, making it a versatile component for engineers and sourcing specialists. Available through IC Manufacturer, this product is tailored for applications requiring dependable transistor solutions in power control and signal processing circuits.

JANTXVK2N2221AUB-Transistor Key Features

  • Medium Power Handling: Supports collector currents up to 800 mA, enabling effective use in power amplification scenarios without thermal overstress.
  • High Voltage Endurance: With a collector-emitter voltage rating of 40 V, it offers robust operation under elevated voltage conditions, critical for industrial switching.
  • Consistent Gain Performance: Typical DC current gain (hFE) values range between 35 and 300, ensuring reliable amplification across diverse circuit designs.
  • Fast Switching Speed: Transition frequency (fT) around 100 MHz supports high-speed switching applications, improving response times in control circuits.

JANTXVK2N2221AUB-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (PC) 500 mW
DC Current Gain (hFE) 35 to 300
Transition Frequency (fT) 100 MHz
Package Type TO-18 Metal Can

JANTXVK2N2221AUB-Transistor Advantages vs Typical Alternatives

This transistor delivers enhanced reliability and thermal stability compared to typical plastic-encapsulated transistors due to its metal can package. Its balanced current handling capability and voltage ratings provide engineers with a robust solution for industrial amplification and switching tasks. The high transition frequency ensures faster response times, making it preferable for precision and high-speed control circuits over standard low-frequency alternatives.

Typical Applications

  • Signal amplification in industrial control systems where medium power gain and fast switching are required to maintain system efficiency and accuracy.
  • Switching applications in power supply regulation circuits due to its robust current and voltage handling capabilities.
  • Driver stages for relays and solenoid controls in automated manufacturing equipment, benefiting from its reliability and thermal stability.
  • General-purpose low noise amplification in audio and instrumentation circuits requiring consistent gain and frequency response.

JANTXVK2N2221AUB-Transistor Brand Info

The JANTXVK2N2221AUB transistor is manufactured under stringent quality standards by a reputable supplier specializing in high-reliability semiconductor components. This product is recognized for its durable metal can packaging and precision electrical characteristics, making it suitable for military, aerospace, and industrial electronics markets. The brand focuses on providing components that meet rigorous performance and environmental specifications, ensuring dependable operation in critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current is 800 milliamperes, allowing the device to handle medium power loads effectively in amplification and switching roles without risk of damage under specified conditions.

What type of package does this transistor use, and why is it important?

This transistor is housed in a TO-18 metal can package, which offers superior thermal conductivity and mechanical protection compared to plastic packages, enhancing reliability in harsh industrial environments.

Can this transistor be used for high-frequency switching applications?

Yes, with a transition frequency of approximately 100 MHz, the device supports fast switching and high-frequency amplification, suitable for control circuits requiring rapid response.

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产品中间询盘

What voltage limits should be observed to ensure safe operation?

The device supports a collector-emitter voltage up to 40 volts and a collector-base voltage of 75 volts. Staying within these limits prevents breakdown and ensures long-term reliability.

What typical applications benefit most from this transistor??s characteristics?

It is ideal for medium power signal amplification, relay driver circuits, power supply regulation, and general-purpose switching in industrial automation and instrumentation where stable gain and reliable switching are essential.

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