JANSD2N5002-Transistor by JANSD | High-Power Switching Transistor | TO-220 Package

  • This transistor amplifies electrical signals efficiently, enhancing circuit performance in various designs.
  • It operates at a voltage level suitable for medium power applications, ensuring stable functionality.
  • The compact package reduces board space, allowing for denser component layouts in tight spaces.
  • Ideal for switching tasks in power management, it helps optimize energy use in electronic devices.
  • Manufactured under strict quality controls, it offers consistent reliability for long-term use.
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JANSD2N5002-Transistor Overview

The JANSD2N5002-Transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and commercial electronics. Featuring a collector-emitter voltage rating of 100V and a collector current capacity of up to 0.6A, this transistor delivers reliable operation in moderate power circuits. Its low saturation voltage and gain characteristics make it suitable for precision control applications, while its rugged construction ensures durability under varying environmental conditions. Sourced from a trusted semiconductor supplier, the JANSD2N5002 is ideal for engineers seeking a dependable component for signal amplification and switching functions. Learn more at IC Manufacturer.

JANSD2N5002-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage of 100V, it supports high-voltage switching, ensuring versatility in industrial control circuits.
  • Moderate current handling: Supports collector currents up to 0.6A, enabling efficient operation in low to medium power applications.
  • Low saturation voltage: Minimizes power dissipation during switching, improving overall circuit efficiency and thermal management.
  • Stable DC current gain (hFE): Provides consistent amplification across a broad range of operating conditions, enhancing signal reliability.

JANSD2N5002-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vce)100V
Collector-Base Voltage (Vcb)100V
Emitter-Base Voltage (Veb)5V
Collector Current (Ic)0.6A
DC Current Gain (hFE)40 – 320(typical range)
Power Dissipation (Ptot)0.625W
Transition Frequency (fT)100MHz
Operating Junction Temperature (Tj)-55 to +150??C

JANSD2N5002-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating and current handling suitable for many industrial applications, outperforming alternatives with lower voltage limits. Its low saturation voltage reduces power loss and heat generation, enhancing system reliability. Compared to similar transistors, it provides a wide gain range ensuring stable amplification, making it a superior choice for precision switching and signal control in demanding environments.

Typical Applications

  • General-purpose amplification and switching in industrial control systems, where reliable high-voltage operation and moderate current handling are essential for signal processing.
  • Driver stages in relay and solenoid circuits requiring robust switching capabilities.
  • Audio amplification circuits leveraging its wide gain range for clear signal reproduction.
  • Low-power inverter and power supply regulation circuits benefiting from its efficient switching and thermal characteristics.

JANSD2N5002-Transistor Brand Info

The JANSD2N5002-Transistor is manufactured by a reputable semiconductor producer known for stringent quality control and consistency in performance. Designed to meet military and industrial standards, this transistor ensures long-term reliability and stability across various electronic designs. Its packaging and electrical characteristics conform to established industry norms, facilitating seamless integration into existing systems and simplifying sourcing for engineers and procurement professionals.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (Vce) rating is 100 volts, allowing the transistor to operate safely in circuits with moderate to high voltage requirements without risk of breakdown.

What collector current can this transistor handle continuously?

This device supports a continuous collector current (Ic) of up to 0.6 amperes, suitable for moderate power applications such as switching and amplification in industrial electronics.

How does the DC current gain (hFE) impact its performance?

The DC current gain ranges from 40 to 320, providing flexibility in amplification applications. A higher hFE allows greater signal amplification with less input current, improving efficiency in control circuits.

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Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) around 100 MHz, this transistor can handle moderately high-frequency signals, making it appropriate for many signal processing and communication tasks.

What are the operating temperature limits for reliable use?

The transistor is rated for an operating junction temperature from -55??C up to +150??C, ensuring dependable performance in both cold environments and elevated temperature conditions common in industrial settings.

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