JANKCDM2N5152-Transistor-Die by JANKCDM2N5152 ?C High-Performance Switching Transistor Die

  • This transistor die controls current flow, enabling precise switching and amplification in electronic circuits.
  • Its electrical characteristics support efficient operation, ensuring stable performance under varying conditions.
  • The die??s compact form factor allows for integration into space-constrained designs, optimizing board layout.
  • Ideal for use in power management systems, it improves energy efficiency and thermal handling in devices.
  • Manufactured to meet stringent quality standards, it offers consistent reliability for long-term applications.
Microchip Technology-logo
产品上方询盘

JANKCDM2N5152-Transistor-Die Overview

The JANKCDM2N5152-Transistor-Die is a precision semiconductor component designed for high-performance switching and amplification applications. This transistor die provides reliable electrical characteristics, making it suitable for integration into custom IC packages and discrete device assemblies. Engineered with consistent gain and low saturation voltage, it supports efficient power management in industrial and consumer electronics. Its compact die format allows for flexible mounting options and enhanced thermal dissipation, enabling robust operation under varying load conditions. For detailed sourcing and technical support, visit the IC Manufacturer.

JANKCDM2N5152-Transistor-Die Key Features

  • High current gain: Ensures efficient signal amplification, reducing the need for additional circuitry.
  • Low saturation voltage: Minimizes power loss during switching, improving overall energy efficiency.
  • Compact die size: Facilitates integration into a variety of package types and tight PCB layouts.
  • Robust thermal performance: Supports consistent operation in demanding thermal environments.

JANKCDM2N5152-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vce)60V
Collector Current (Ic)2A
Gain Bandwidth Product (fT)100MHz
Power Dissipation (Pd)1.2W
Base-Emitter Voltage (Vbe)1.2V
Junction Temperature (Tj) Max150??C
Transition Frequency (fT)100MHz
Package TypeDie

JANKCDM2N5152-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current gain and low saturation voltage compared to typical alternatives, enabling more efficient power switching and lower heat generation. Its compact die format allows easier integration into custom semiconductor packages, improving design flexibility. Additionally, robust thermal handling enhances reliability under high load, making it an excellent choice for engineers seeking reliable, high-performance transistor dies.

Typical Applications

  • Power management circuits in industrial automation systems, where efficient switching and thermal stability are critical for device longevity and performance.
  • Signal amplification stages in audio and communication equipment requiring consistent gain and low distortion.
  • Discrete transistor assemblies in custom IC packages for specialized electronic designs.
  • Switching components in consumer electronics for energy-efficient operation and compact integration.

JANKCDM2N5152-Transistor-Die Brand Info

The JANKCDM2N5152-Transistor-Die is a product offered by a leading semiconductor manufacturer known for delivering high-quality transistor dies tailored for precision applications. This product line emphasizes reliability and efficiency, supporting engineers and designers in developing robust electronic solutions. The die-level format provides flexibility for integration into various packaging and assembly processes, reflecting the brand??s commitment to innovation and performance in the semiconductor industry.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating for this transistor die is 2 amperes, which defines the highest continuous current it can handle safely under specified operating conditions without damage.

Can this transistor die be used in high-frequency amplifier circuits?

Yes, with a gain bandwidth product of 100 MHz, this transistor die is suitable for moderate to high-frequency applications, including amplifier stages where frequency response is critical.

How does the die format benefit system design and integration?

The die format offers design engineers flexibility to incorporate the transistor into custom packages or multi-chip modules, allowing for optimized board space utilization and improved thermal management.

📩 Contact Us

产品中间询盘

What thermal limits should engineers consider when using this transistor die?

The maximum junction temperature is rated at 150??C, which means proper thermal management and heat sinking should be employed to maintain device performance and longevity within this limit.

Is this transistor die suitable for power switching applications?

Yes, its low saturation voltage and ability to handle up to 2 A collector current make it well-suited for power switching roles, contributing to efficient energy usage and reduced heat generation in switching circuits.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?