JANTXVE2N2222AUA-Transistor Overview
The JANTXVE2N2222AUA transistor is a high-performance bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a robust NPN silicon epitaxial planar structure capable of handling collector currents up to 800mA and collector-emitter voltages up to 40V. This transistor offers reliable operation with a transition frequency (fT) of 250 MHz, making it suitable for medium-frequency signal amplification. Its hermetically sealed metal can package ensures enhanced durability and thermal performance, ideal for industrial and military-grade environments. For detailed sourcing and technical data, visit IC Manufacturer.
JANTXVE2N2222AUA-Transistor Key Features
- High collector current capacity: Supports up to 800mA, enabling efficient switching and amplification in demanding circuits.
- Collector-emitter voltage rating of 40V: Allows operation in moderate-voltage environments, enhancing design flexibility.
- Transition frequency (fT) of 250 MHz: Provides fast switching speeds suitable for RF and general-purpose amplification.
- Hermetically sealed metal can package: Ensures superior reliability and thermal dissipation, reducing failure rates in harsh conditions.
JANTXVE2N2222AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Silicon Epitaxial Planar | ?C |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Transition Frequency (fT) | 250 | MHz |
| Gain Bandwidth Product (hFE) | 40?C300 | (typical) |
| Package | Hermetically Sealed Metal Can | ?C |
JANTXVE2N2222AUA-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and performance compared to standard plastic-encapsulated BJTs due to its hermetic metal can packaging, which improves thermal handling and environmental resistance. Its high collector current and voltage ratings support more demanding applications, while the 250 MHz transition frequency delivers faster switching speeds. These features make it a superior choice for engineers seeking durable, high-speed, and robust bipolar transistors in industrial or military-grade circuits.
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Typical Applications
- Switching and amplification in medium-frequency analog circuits where reliable operation at up to 40V and 800mA is essential, such as driver stages and signal conditioning.
- General-purpose high-frequency amplifier circuits requiring fast response and stable gain.
- Industrial control systems benefiting from robust transistor packages that withstand harsh environments and temperature variations.
- Military and aerospace electronics where hermetic sealing and reliability under stress are critical.
JANTXVE2N2222AUA-Transistor Brand Info
The JANTXVE2N2222AUA is part of the JANTX series, known for its stringent quality standards and compliance with military-grade specifications. This transistor is manufactured using a proven silicon epitaxial planar process, guaranteeing consistent electrical characteristics and long-term reliability. Its hermetically sealed metal can package differentiates it from commercial-grade equivalents by offering enhanced protection against moisture, contaminants, and mechanical stress, making it well-suited for critical applications requiring dependable performance.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current rating is 800mA. This allows the transistor to handle moderate power switching and amplification tasks without risk of damage under specified operating conditions.
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Can this transistor operate at high frequencies?
Yes, the device has a transition frequency (fT) of 250 MHz, making it suitable for medium-frequency switching and amplification applications commonly found in communications and signal processing circuits.
What type of package does this transistor use and why is it important?
This transistor is housed in a hermetically sealed metal can package. This packaging ensures superior environmental protection, improved thermal dissipation, and higher reliability compared to plastic packages, especially in harsh or mission-critical environments.
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What voltage ratings are specified for this transistor?
The collector-emitter voltage (VCEO) is rated at 40V, collector-base voltage (VCBO) at 75V, and emitter-base voltage (VEBO) at 6V. These ratings define the maximum voltages the transistor can safely withstand between its terminals during operation.
Is this transistor suitable for military or aerospace applications?
Yes, the transistor??s design and hermetic metal can packaging meet stringent reliability and environmental requirements, making it appropriate for aerospace, military, and other high-reliability industrial applications.
