MSR2N5154U3-Transistor NPN Power Transistor in TO-220 Package by MSR2N

  • This transistor amplifies and switches electronic signals, enabling efficient circuit control and signal processing.
  • The device features a maximum voltage rating suitable for high-voltage applications, ensuring safe operation under stress.
  • The compact package reduces board space, allowing for denser circuit designs in limited areas.
  • Ideal for power regulation in consumer electronics, it supports stable performance and energy management.
  • Manufactured under strict quality standards, this component offers reliable operation and long-term durability.
Microchip Technology-logo
产品上方询盘

MSR2N5154U3-Transistor Overview

The MSR2N5154U3-Transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and consumer electronics. It offers robust electrical characteristics, including a collector current capacity suitable for moderate power applications and a low saturation voltage for efficient switching. Engineered to deliver consistent performance across a wide temperature range, this transistor supports reliable operation in demanding environments. Its compact package and compatibility with standard circuit designs make it a versatile component for engineers and sourcing specialists seeking durable, cost-effective transistor solutions. Detailed specifications and application guidance are available through IC Manufacturer.

MSR2N5154U3-Transistor Key Features

  • High Collector Current Capability: Supports continuous collector current up to 600 mA, enabling efficient switching and amplification in medium-power circuits.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal performance.
  • Fast Switching Speed: Ensures rapid response times suitable for high-frequency applications and signal processing tasks.
  • Wide Operating Temperature Range: Allows reliable operation in industrial and automotive environments where thermal conditions vary significantly.

MSR2N5154U3-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 – 320 ??
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 V (at IC=150 mA)
Operating Junction Temperature (Tj) -55 to +150 ??C

MSR2N5154U3-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high collector current capacity and low saturation voltage compared to typical alternatives, resulting in reduced conduction losses and improved energy efficiency. Its fast switching speed and broad gain range provide enhanced accuracy and control in amplification applications. Reliability under extended temperature ranges further distinguishes this device, making it well-suited for industrial electronics demanding consistent performance and durability.

Typical Applications

  • Switching circuits in power management systems where efficient current handling and minimal voltage drop are critical for energy savings and heat reduction.
  • Signal amplification stages within audio and communication equipment requiring linear gain and fast response characteristics.
  • General-purpose transistor usage in embedded control and sensor interface circuits needing robust switching and amplification.
  • Automotive electronic modules that demand reliable transistor operation across wide temperature fluctuations and harsh conditions.

MSR2N5154U3-Transistor Brand Info

The MSR2N5154U3-Transistor is manufactured by a leading semiconductor supplier known for delivering high-quality discrete components designed for industrial and consumer electronics markets. This product line emphasizes reliability, consistent electrical performance, and ease of integration. The transistor is backed by comprehensive datasheets and technical support, ensuring engineers and sourcing specialists can deploy it confidently in a variety of applications requiring dependable bipolar transistor solutions.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum continuous collector current of 600 mA, which allows it to handle moderate power loads effectively in switching and amplification circuits without degradation in performance.

Can this transistor operate reliably at elevated temperatures?

Yes, it is specified to operate reliably within a junction temperature range from -55??C up to +150??C, making it suitable for demanding industrial and automotive environments with wide temperature variations.

What is the significance of the low collector-emitter saturation voltage?

A low saturation voltage, typically around 0.25 V at 150 mA collector current, reduces power dissipation during switching, which improves the overall efficiency and thermal management of the electronic system.

📩 Contact Us

产品中间询盘

How does the DC current gain affect circuit design?

The DC current gain (hFE) ranges approximately from 40 to 320, providing flexibility in amplification and switching applications by allowing designers to optimize the transistor??s biasing and gain parameters to suit specific circuit requirements.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency (fT) of about 100 MHz, the device supports high-frequency operation, making it appropriate for signal processing and RF switching applications where fast response is critical.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?