JANKCDF2N5152-Transistor-Die High-Speed Switching Transistor Die by JANKCDF2N5152

  • This transistor die amplifies electrical signals, enabling improved control in electronic circuits.
  • The device??s compact package supports efficient board space usage in dense electronic designs.
  • Its robust construction ensures long-term reliability in variable operating conditions.
  • Ideal for power management applications, it enhances energy efficiency in embedded systems.
  • JANKCDF2N5152-Transistor-Die offers stable performance across typical temperature ranges for consistent operation.
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产品上方询盘

JANKCDF2N5152-Transistor-Die Overview

The JANKCDF2N5152-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification tasks in industrial electronics. Offering robust electrical characteristics and a compact die format, this transistor die ensures seamless integration into custom module assemblies. Its precise electrical parameters support reliable operation under diverse environmental and load conditions, making it a preferred choice for engineers and sourcing specialists seeking dependable transistor dies. Designed with advanced semiconductor fabrication techniques, it delivers stable gain and low leakage currents, enhancing overall circuit efficiency. For detailed sourcing and support, visit IC Manufacturer.

JANKCDF2N5152-Transistor-Die Key Features

  • High Current Handling Capability: Enables effective power amplification with minimal thermal stress, ensuring durability in demanding applications.
  • Optimized Low Saturation Voltage: Reduces power loss during switching, improving energy efficiency and thermal management in compact designs.
  • Superior Gain Characteristics: Provides consistent current amplification, enhancing signal integrity and overall circuit performance.
  • Compact Die Size: Facilitates integration into multi-chip modules and custom assemblies, supporting space-constrained industrial applications.

JANKCDF2N5152-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor Die
Collector-Emitter Voltage (VCEO)150 V
Collector Current (IC)8 A
Power Dissipation (Ptot)40 W (die level)
Gain Bandwidth Product (fT)50 MHz
Saturation Voltage (VCE(sat))1.2 V (typical)
Junction Temperature (Tj)175 ??C (max)
Package TypeBare Die (transistor die)
Base-Emitter Voltage (VBE)1.2 V (typical)
Leakage Current (ICBO)?? 100 nA at 25??C

JANKCDF2N5152-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current handling and low saturation voltage, which enhances efficiency compared to typical alternatives. Its high gain bandwidth product supports faster switching speeds, essential for modern industrial applications. Additionally, the bare die format allows for flexible integration into custom packages, reducing parasitic losses and improving thermal performance. These advantages result in improved reliability, power efficiency, and design versatility in demanding electronic assemblies.

Typical Applications

  • Power Amplification in Industrial Control Systems: Ideal for driving loads requiring stable current gain and high voltage endurance in automated machinery and instrumentation.
  • Switching Components in Power Supplies: Suitable for efficient switching in DC-DC converters and linear regulators.
  • Motor Driver Circuits: Supports robust current delivery for controlling industrial motors and actuators.
  • Custom Semiconductor Modules: Enables integration into multi-chip modules for specialized industrial electronics.

JANKCDF2N5152-Transistor-Die Brand Info

The JANKCDF2N5152-Transistor-Die is manufactured by a leading semiconductor supplier specializing in high-quality transistor dies for industrial applications. This product reflects the brand??s commitment to precision engineering and reliability, providing components that meet stringent electrical and thermal performance requirements. The brand supports extensive technical documentation and supply chain solutions to assist engineers and sourcing specialists in seamless product integration and lifecycle management.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating is 8 A, allowing the transistor die to handle substantial current loads suitable for power amplification and switching tasks in industrial circuits.

Can this transistor die be used in high-temperature environments?

Yes, the maximum junction temperature is rated at 175 ??C, making it capable of operating reliably in elevated temperature conditions commonly encountered in industrial applications.

What packaging options are available for this transistor die?

This product is supplied as a bare die, allowing engineers the flexibility to integrate it into custom packages or multi-chip modules according to specific design requirements.

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产品中间询盘

How does the low saturation voltage benefit circuit performance?

Low saturation voltage reduces power dissipation during switching, which enhances energy efficiency and minimizes heat generation, improving overall circuit reliability and lifespan.

Is the gain bandwidth product suitable for high-speed switching?

With a gain bandwidth product of 50 MHz, this transistor die supports high-speed switching applications, enabling efficient operation in modern industrial electronics requiring fast response times.

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