JAN2N6678T1-Transistor by JAN | NPN Transistor Amplifier | TO-92 Package

  • Acts as a semiconductor switch or amplifier, enabling efficient control of electrical signals in circuits.
  • Features a specified voltage rating ensuring stable operation under expected electrical loads.
  • Compact package design contributes to reduced board space, facilitating dense circuit layouts.
  • Ideal for signal amplification in consumer electronics, improving overall device performance.
  • Manufactured under controlled processes to maintain consistent quality and long-term reliability.
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产品上方询盘

JAN2N6678T1-Transistor Overview

The JAN2N6678T1-Transistor is a high-performance bipolar junction transistor (BJT) designed for robust amplification and switching applications. Engineered to meet stringent military and industrial standards, this transistor ensures reliable operation under demanding conditions. It features a complementary NPN configuration suitable for medium power stages, offering consistent gain and saturation characteristics. Its rugged construction supports extended temperature ranges and high voltage tolerances, making it ideal for precision control in analog circuits. Sourcing from a trusted IC Manufacturer, this transistor supports engineers and procurement specialists focused on durable, high-reliability semiconductor components.

JAN2N6678T1-Transistor Key Features

  • High current capacity: Supports collector currents up to 8A, enabling efficient power handling in amplifier and switching circuits.
  • Wide voltage rating: With a collector-emitter voltage rating of 80V, it accommodates diverse industrial voltage requirements without compromising reliability.
  • Robust gain performance: Current gain (hFE) ranges from 25 to 100, ensuring stable amplification across varied operating conditions.
  • Thermal endurance: Designed for continuous operation up to 200??C junction temperature, enhancing device longevity in high-temperature environments.

JAN2N6678T1-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 8 A
Power Dissipation PD 75 W
DC Current Gain hFE 25 – 100 ??
Transition Frequency fT 4 MHz
Operating Junction Temperature TJ -65 to +200 ??C

JAN2N6678T1-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced power handling with a collector current rating of 8A and a robust voltage tolerance up to 80V, surpassing many standard BJTs. Its wide operating temperature range and reliable gain stability provide superior performance in harsh industrial environments. Compared to typical alternatives, it ensures greater durability and consistent switching response, making it particularly suitable for demanding military and aerospace applications.

Typical Applications

  • Power amplification in industrial control systems, benefiting from its high current capacity and reliability under thermal stress.
  • Switching circuits in aerospace electronics, where ruggedness and long-term stability are critical for mission success.
  • Driver stages for relay and solenoid actuators requiring robust voltage and current ratings for consistent operation.
  • Analog signal processing in military-grade communication equipment demanding precise gain and noise performance.

JAN2N6678T1-Transistor Brand Info

This transistor is manufactured under the JAN (Joint Army-Navy) standard, ensuring compliance with strict military specifications for quality, reliability, and performance. The JAN2N6678T1 is part of a series of industrial-grade semiconductors designed to meet defense and aerospace industry needs. Certified by leading semiconductor producers, this device reflects decades of engineering expertise and rigorous quality control, targeting engineers and sourcing specialists prioritizing dependable transistor solutions for critical applications.

FAQ

What is the maximum collector current for this transistor?

The transistor supports a maximum continuous collector current of 8 amperes, allowing it to handle moderate to high power loads efficiently in both amplification and switching circuits.

Can this transistor operate in high-temperature environments?

Yes, it is rated for operation with a junction temperature range from -65??C to +200??C, making it suitable for use in harsh industrial and military settings where thermal endurance is essential.

What is the significance of the collector-emitter voltage rating?

The collector-emitter voltage rating of 80V indicates the maximum voltage the transistor can withstand between the collector and emitter terminals without breakdown, ensuring stable operation in medium-voltage applications.

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产品中间询盘

How does the current gain (hFE) affect circuit design?

The DC current gain range of 25 to 100 allows designers to predict amplification levels and optimize biasing in analog circuits, providing flexibility for various application requirements.

Is this transistor suitable for aerospace or military use?

Yes, the JAN prefix signifies compliance with military standards, and its robust electrical and thermal specifications make it suitable for aerospace and defense electronics requiring high reliability and ruggedness.

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