JANKCDR2N5152-Transistor-Die Overview
The JANKCDR2N5152-Transistor-Die is a high-performance semiconductor component designed for integration into advanced electronic assemblies. This transistor die offers precise switching capabilities with reliable electrical characteristics, making it suitable for power amplification and signal modulation in industrial and commercial circuits. Its robust construction ensures stable operation under varying thermal and electrical conditions. Sourced from a reputable supplier, this transistor die supports efficient device miniaturization and system optimization. For engineers and sourcing specialists seeking dependable transistor dies with consistent quality, the JANKCDR2N5152-Transistor-Die represents a practical choice. Discover more at IC Manufacturer.
JANKCDR2N5152-Transistor-Die Key Features
- High current handling capability: Supports substantial collector current, enabling effective power management in demanding circuits.
- Low saturation voltage: Ensures efficient switching with minimal power loss, improving overall circuit energy efficiency.
- Robust die construction: Enhances thermal stability and reliability, critical for industrial-grade applications.
- Optimized switching speed: Facilitates faster response times, suitable for high-frequency and pulse-width modulation uses.
JANKCDR2N5152-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector Current (IC) | 6 | A |
| Power Dissipation (Ptot) | 40 | W |
| Gain Bandwidth Product (fT) | 100 | MHz |
| Transition Frequency | 100 | MHz |
| Current Gain (hFE) | 50?C100 | ?? |
| Junction Temperature (Tj) | 150 | ??C |
| Package Type | Die | ?? |
JANKCDR2N5152-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current capacity combined with low saturation voltage, resulting in better power efficiency than many standard alternatives. Its enhanced thermal stability reduces failure rates in harsh environments, while optimized switching speeds improve signal integrity. Such advantages make it well-suited for high-reliability industrial electronics requiring compact integration without sacrificing performance.
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Typical Applications
- Power Amplification: Ideal for use in linear and switching power amplifiers, providing reliable current control and efficient power handling in industrial control systems.
- Signal Modulation: Suitable for signal processing circuits requiring fast switching and stable gain characteristics.
- Motor Control: Applies well in DC motor driver circuits where precise current switching is essential.
- Power Management Modules: Integrates into power regulation and conversion units demanding durable transistor dies with consistent electrical performance.
JANKCDR2N5152-Transistor-Die Brand Info
The transistor die is manufactured by a leading semiconductor provider known for delivering high-quality discrete components designed for demanding electronic applications. This product line emphasizes precision manufacturing processes and rigorous testing to ensure that each die meets stringent electrical and thermal specifications. The brand is recognized for supporting engineers and sourcing professionals with reliable, industry-standard transistor solutions tailored for diverse industrial uses.
FAQ
What are the primary electrical limits of this transistor die?
The transistor die supports a maximum collector-emitter voltage of 30 V and a collector current up to 6 A. It is designed for power dissipation up to 40 W and can reliably operate at junction temperatures as high as 150??C, ensuring robust performance under typical industrial conditions.
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How does the die format impact integration in circuit designs?
The die format allows direct integration into custom packages or hybrid circuits, enabling designers to optimize space and thermal management. This flexibility supports high-density electronic assemblies and specialized applications requiring compact, efficient transistor solutions.
What switching speeds can be expected from this component?
With a gain bandwidth product and transition frequency around 100 MHz, the transistor die facilitates fast switching, making it suitable for applications such as pulse-width modulation and high-frequency amplification where rapid response times are critical.
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Is this transistor die suitable for high-temperature environments?
Yes, the device is rated for junction temperatures up to 150??C, indicating strong thermal resilience. This capability supports usage in environments with elevated temperatures without compromising reliability or performance.
What typical applications benefit most from this transistor die?
This transistor die is especially beneficial for power amplification, motor control, signal modulation, and power management applications. Its electrical characteristics and thermal robustness make it a preferred choice for industrial and commercial electronic systems requiring dependable transistor performance.
