JANSP2N5002-Transistor by JAN | NPN Bipolar Junction Transistor | TO-18 Package

JANSP2N5002-Transistor Overview

The JANSP2N5002 is a high-voltage NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade applications. This transistor offers robust performance with a collector-emitter voltage rating suitable for demanding environments. Its rugged construction ensures reliability under thermal and electrical stress, making it ideal for use in power management and signal processing circuits. With its predictable gain characteristics and fast switching capability, the device supports efficient circuit design and stable operation. Available through IC Manufacturer, this transistor meets stringent quality standards required by engineers and sourcing specialists.

JANSP2N5002-Transistor Key Features

• High voltage rating: Supports collector-emitter voltages up to 500 V, enabling use in high-voltage switching circuits.
• Moderate gain hFE: Facilitates stable amplification with predictable current gain characteristics.
• High collector current capability: Handles collector currents up to 0.8 A for robust load driving performance.
• Fast switching speed: Minimizes switching losses, improving overall circuit efficiency.
• Wide operating temperature range: Ensures reliable function in harsh industrial environments.
• Hermetic TO-18 metal package: Provides excellent thermal dissipation and mechanical protection.
• Military-grade quality standards: Suitable for defense and aerospace applications requiring stringent reliability.

JANSP2N5002-Transistor Technical Specifications

JANSP2N5002-Transistor Advantages vs Typical Alternatives

This transistor delivers superior voltage handling and reliable performance across a broad temperature range compared to typical low-voltage transistors. Its robust packaging and military-grade specifications provide enhanced durability and stability, reducing failure rates in critical applications. The combination of high collector current and moderate gain enables flexible use in both amplification and switching roles, offering engineers a versatile and dependable solution that improves circuit efficiency and longevity.

Typical Applications

• High-voltage switching and amplification circuits in industrial power supplies and motor control systems where reliable switching under elevated voltages is essential.
• Signal amplification stages requiring stable gain and low noise performance within harsh environments.
• Military and aerospace electronics demanding components with stringent reliability and temperature tolerance.
• General-purpose transistor applications involving power management and load driving in ruggedized electronic modules.

JANSP2N5002-Transistor Brand Info

The JANSP2N5002 is produced under strict quality and reliability controls aimed at industrial and military markets. This transistor is a part of a legacy line known for robust construction and dependable electrical characteristics. Its metal TO-18 package and tested electrical parameters reflect a commitment to durability and performance consistency. The product??s availability through authorized distributors ensures traceability and compliance with industry standards, supporting critical sourcing and supply chain requirements.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The transistor supports a maximum collector-emitter voltage (Vceo) of 500 volts, making it suitable for high-voltage switching and amplification applications where voltage stress is significant.

Can this transistor operate in extreme temperature environments?

Yes, it is rated to operate reliably between -65??C and +200??C, allowing use in severe industrial and military environments without degradation of performance.

What package type does this transistor use and why is it important?

This device comes in a hermetically sealed TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, enhancing reliability in harsh conditions.

What is the typical DC current gain (hFE) range of this transistor?

The typical DC current gain ranges from 40 to 160, offering a balanced gain suitable for both switching and amplification tasks in various circuit designs.

Is this transistor compliant with military-grade quality standards?

Yes, it meets military-grade quality and reliability standards, making it appropriate for defense and aerospace applications requiring stringent performance and durability.