JAN2N6678-Transistor by JAN | High-Speed Switching Transistor | TO-92 Package

  • Functions as a high-performance transistor, enabling efficient signal amplification and switching in circuits.
  • Offers a key electrical characteristic that ensures stable operation under varying load conditions.
  • Features a compact package type that saves board space and simplifies integration into designs.
  • Ideal for use in power management modules, improving device responsiveness and energy control.
  • Constructed to meet strict quality standards, supporting long-term reliability in demanding environments.
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JAN2N6678-Transistor Overview

The JAN2N6678 transistor is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military applications. It offers reliable operation under stringent conditions, featuring a maximum collector current of 10A and a collector-emitter voltage rating of 100V. This device is optimized for power handling and high gain, making it suitable for demanding electronic circuits requiring both efficiency and durability. Manufactured to meet military-grade standards, the transistor ensures consistent performance across a wide temperature range. For detailed sourcing and technical support, consult IC Manufacturer.

JAN2N6678-Transistor Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling heavy load switching and power amplification with stable performance.
  • Voltage Endurance: Rated for up to 100V collector-emitter voltage, allowing use in circuits with relatively high voltage requirements.
  • Low Saturation Voltage: Ensures efficient switching by minimizing power loss and heat generation during operation.
  • Military Specification Compliance: Built to meet JAN standards, providing enhanced reliability and consistency in harsh environments.

JAN2N6678-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Power Dissipation (Ptot) 75 W
Transition Frequency (fT) 10 MHz
DC Current Gain (hFE) 40-160 ?C
Operating Junction Temperature (TJ) -65 to +200 ??C

JAN2N6678-Transistor Advantages vs Typical Alternatives

This transistor outperforms typical alternatives by combining a high collector current rating with a robust voltage tolerance, ensuring superior power handling and reliability in industrial and military circuits. Its low saturation voltage improves energy efficiency, while compliance with military-grade standards guarantees long-term stability under extreme environmental conditions. These advantages make it a preferred choice for applications demanding dependable switching and amplification with precise control.

Typical Applications

  • Power Amplification in Industrial Control Systems: Ideal for driving heavy loads and amplifying signals where consistent high current and voltage handling are critical.
  • Military and Aerospace Electronics: Suitable for rugged environments requiring components that meet stringent JAN standards for durability and reliability.
  • Switching Regulators and Converters: Enables efficient switching operations in power supply circuits with minimal losses.
  • High-Power Signal Amplification: Used in applications requiring clean and stable amplification of medium-frequency signals up to 10 MHz.

JAN2N6678-Transistor Brand Info

The JAN2N6678 transistor is produced under the Joint Army-Navy (JAN) specification, ensuring it meets rigorous military-grade quality and reliability standards. This industrial-grade device is renowned for its consistent performance in harsh conditions, offering engineers and sourcing specialists a dependable solution for high-power and high-reliability applications. The JAN designation reflects strict manufacturing and testing processes, making it a trusted choice for critical electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

This transistor supports a maximum collector current of 10 amperes, making it suitable for applications requiring substantial load driving capability and power amplification.

Can this transistor operate at high voltages?

Yes, it is rated for a maximum collector-emitter voltage of 100 volts and a collector-base voltage of 120 volts, allowing it to function reliably in circuits with relatively high voltage demands.

What temperature range can this transistor handle?

The device operates safely within a junction temperature range from -65??C up to +200??C, ensuring reliable performance in both extreme cold and high-temperature environments.

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Is this transistor compliant with any military standards?

Yes, it is manufactured to meet JAN specifications, which are military standards that guarantee enhanced reliability, quality, and durability suitable for defense and aerospace applications.

What applications are best suited for this transistor?

This transistor excels in power amplification, switching in industrial control systems, military and aerospace electronics, and high-power signal amplification tasks where robustness and efficiency are essential.

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