JAN2N5154P-Transistor-PIND by JAN | High-Speed Switching Transistor | PIND Package

  • This transistor amplifies electrical signals, enabling improved control in various electronic circuits.
  • Its maximum voltage rating ensures safe operation within designed electrical limits, protecting connected components.
  • The PIND package offers a compact footprint, optimizing board space for dense circuit designs.
  • Ideal for switching applications, it provides reliable performance in power regulation and signal modulation tasks.
  • Manufactured to meet stringent quality standards, it delivers consistent performance under varying environmental conditions.
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产品上方询盘

JAN2N5154P-Transistor-PIND Overview

The JAN2N5154P is a high-performance Pindell transistor designed for robust switching and amplification applications within industrial and military-grade electronics. Engineered to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures reliability under harsh environmental conditions, including temperature extremes and mechanical stress. Its construction supports stable electrical characteristics critical for precision control circuits, signal processing, and power management. Sourced from a trusted IC Manufacturer, the device offers consistent performance essential for aerospace, defense, and industrial sectors requiring dependable semiconductor components.

JAN2N5154P-Transistor-PIND Key Features

  • High gain capability: Provides efficient current amplification, enhancing signal strength in complex electronic circuits.
  • JAN military specification compliance: Guarantees superior quality and reliability for mission-critical applications.
  • Wide operating temperature range: Maintains performance in extreme environments, ensuring system robustness.
  • Hermetically sealed PIND package: Protects against moisture and contaminants, increasing device longevity and operational stability.

JAN2N5154P-Transistor-PIND Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 1 A continuous
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Ptot) 800 mW
Package Type Hermetically sealed PIND (Plastic Integrated Network Device) package
Operating Temperature Range -65??C to +200??C

JAN2N5154P-Transistor-PIND Advantages vs Typical Alternatives

This transistor excels over standard commercial devices by adhering to rigorous military-grade JAN standards, offering enhanced reliability and stability in critical systems. Its hermetically sealed PIND packaging protects against environmental factors, improving lifespan and performance consistency. Additionally, the wide temperature tolerance and high gain make it suitable for precision control in demanding applications where typical transistors may fail or experience drift.

Typical Applications

  • Aerospace and defense electronics: Used in control circuits requiring dependable switching and amplification under extreme environmental conditions.
  • Industrial automation systems: Suitable for precise signal amplification and switching in harsh factory environments.
  • Communication equipment: Supports RF and low-noise amplification in secure communication devices.
  • Instrumentation and measurement devices: Ensures reliable operation in sensitive and critical sensing applications.

JAN2N5154P-Transistor-PIND Brand Info

The JAN2N5154P transistor is a specialized product offered by leading semiconductor manufacturers adhering to military specifications. Designed for durability and precision, it is part of a trusted portfolio of JAN components recognized for quality and reliability in defense and industrial sectors. This product embodies the brand??s commitment to providing rugged, high-performance semiconductor solutions that meet stringent environmental and operational standards.

FAQ

What does the JAN designation indicate for this transistor?

The JAN designation signifies that the transistor meets strict Joint Army-Navy military standards, ensuring high reliability, quality control, and performance under demanding environmental conditions such as vibration, temperature extremes, and humidity.

What type of package does the transistor use and why is it important?

This device employs a hermetically sealed PIND package, which protects the internal semiconductor elements from moisture, contaminants, and mechanical damage, enhancing durability and stability for long-term use in harsh environments.

What are the typical operating temperature limits for this transistor?

The transistor is rated for operation from -65??C up to +200??C, making it suitable for aerospace and military applications where temperature extremes are common and device reliability is critical.

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产品中间询盘

Can this transistor handle high-frequency applications?

Yes, with a typical transition frequency around 100 MHz, the transistor supports moderate high-frequency operation suitable for RF amplification and signal processing in communication and instrumentation systems.

How does the current gain range affect its application?

The DC current gain range of 40 to 160 allows for flexible amplification levels, enabling designers to optimize circuit performance for switching or linear amplification tasks depending on specific application requirements.

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