JANTXVK2N2222AUA-Transistor NPN Amplifier Switching Transistor in TO-18 Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in various circuits.
  • It features a standard gain characteristic that ensures consistent performance in amplification tasks.
  • The compact package supports board-space savings, making it suitable for dense circuit layouts.
  • Ideal for signal amplification in low-power applications, improving responsiveness in control systems.
  • Manufactured under stringent quality standards to provide reliable operation over extended use.
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产品上方询盘

JANTXVK2N2222AUA-Transistor Overview

The JANTXVK2N2222AUA transistor is a robust NPN bipolar junction transistor designed for high reliability and performance in switching and amplification applications. Engineered to meet military and industrial standards, this device offers stable operation in demanding environments, ensuring consistent current gain and low noise characteristics. Its TO-18 metal can package provides excellent thermal conductivity and mechanical strength, making it suitable for aerospace, defense, and industrial electronics. Available through IC Manufacturer, this transistor balances durability with electrical efficiency, supporting engineers and sourcing specialists in implementing reliable transistor solutions.

JANTXVK2N2222AUA-Transistor Key Features

  • High current gain: Ensures efficient signal amplification with minimal distortion, critical for precision analog circuits.
  • Collector current rating up to 800mA: Supports moderate power switching tasks, enhancing versatility across applications.
  • High transition frequency (fT) of 300 MHz: Enables fast switching performance for high-frequency circuit designs.
  • TO-18 hermetic metal can packaging: Provides superior thermal dissipation and protection against environmental stress, improving reliability.

JANTXVK2N2222AUA-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 40 V
Collector Current (Ic) 800 mA
Power Dissipation (Pd) 625 mW
Transition Frequency (fT) 300 MHz
DC Current Gain (hFE) 100?C300 (typical)
Package TO-18 Metal Can
Operating Temperature Range -55??C to +200??C
Base-Emitter Voltage (Vbe) 1.2 V (max)

JANTXVK2N2222AUA-Transistor Advantages vs Typical Alternatives

This transistor excels in reliability and thermal performance compared to standard plastic-encapsulated devices. Its metal can package offers enhanced heat dissipation and mechanical integrity, critical for high-stress environments. With a high-frequency response and robust current handling, it outperforms typical low-power transistors in switching speed and gain stability, making it a preferred choice for aerospace and defense electronics where precision and durability are paramount.

Typical Applications

  • Signal amplification in analog circuits where stable gain and low noise are essential, such as instrumentation and communication equipment.
  • Switching applications in moderate power systems, including relay driving and LED control circuits.
  • High-frequency oscillator circuits requiring fast transition frequency performance.
  • Military and aerospace electronics demanding hermetic sealing and reliable operation over extended temperature ranges.

JANTXVK2N2222AUA-Transistor Brand Info

The JANTXVK2N2222AUA is a rugged, military-grade transistor recognized for its proven reliability and precision. Manufactured under stringent quality standards, this device represents a trusted choice for engineers needing dependable transistor solutions in harsh environments. Its heritage and packaging align with industry requirements for aerospace and defense sectors, supporting long-term availability and consistent performance. This transistor is part of a legacy product line designed to meet or exceed MIL-STD specifications.

FAQ

What type of transistor is the JANTXVK2N2222AUA?

It is an NPN bipolar junction transistor (BJT), designed for amplification and switching applications. This type of transistor controls current flow through the collector-emitter path based on the base current, making it suitable for a variety of electronic circuit uses.

What is the maximum collector current rating for this transistor?

The device supports a maximum continuous collector current of 800 milliamperes, allowing it to handle moderate power switching tasks efficiently without overheating or performance degradation.

What packaging does this transistor use, and why is it important?

The transistor uses a TO-18 hermetic metal can package. This packaging offers excellent thermal conductivity and protects the device from moisture and mechanical stress, ensuring reliable operation in challenging environments such as aerospace and defense.

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产品中间询盘

What is the typical transition frequency (fT) of this device?

This transistor features a transition frequency of approximately 300 MHz, enabling it to switch rapidly and perform effectively in high-frequency circuits and oscillators where speed is critical.

In what temperature range can this transistor reliably operate?

The operating temperature range spans from -55??C to +200??C, making the transistor suitable for use in extreme temperature conditions commonly encountered in military and industrial applications.

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