JANKCDP2N5154-Transistor-Die Overview
The JANKCDP2N5154-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for integration into semiconductor modules and custom electronic assemblies. This transistor die offers reliable switching and amplification capabilities with a focus on low noise and high gain. Ideal for power management and signal processing applications, it supports efficient current handling and voltage tolerance within compact die dimensions. Fabricated with precise semiconductor technology, this device ensures consistent electrical characteristics, making it suitable for engineers and sourcing specialists seeking a dependable transistor component. For further details, visit IC Manufacturer.
JANKCDP2N5154-Transistor-Die Key Features
- High current gain (hFE): This ensures improved amplification efficiency, reducing the need for additional gain stages in circuit designs.
- Low collector-emitter saturation voltage: Minimizes power loss and enhances overall energy efficiency in switching applications.
- Robust voltage ratings: Supports operation under elevated voltage conditions, enabling reliable performance in power circuits.
- Compact transistor die format: Facilitates integration into multi-chip modules and custom packaging, optimizing space and thermal management.
JANKCDP2N5154-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor Die |
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Maximum Collector Current (IC) | 1.5 A |
| DC Current Gain (hFE) | Minimum 100 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.3 V at IC=1 A |
| Transition Frequency (fT) | 100 MHz typical |
| Power Dissipation (PD) | 1 W (die level, thermal limits apply) |
| Die Dimensions | Approx. 1.2 mm x 1.5 mm |
| Package Type | Bare transistor die for hybrid integration |
JANKCDP2N5154-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides superior current gain and lower saturation voltage compared to many standard discrete transistors, leading to enhanced amplification and power efficiency. Its bare die form enables tight integration in advanced modules, reducing parasitic effects and improving thermal performance. The device’s reliable voltage and current ratings support demanding industrial and power management applications, offering engineers a precise and durable solution over typical packaged devices.
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Typical Applications
- Power amplifier circuits requiring high gain and low distortion, benefiting from the die’s efficient current handling and gain characteristics.
- Switching regulators where low saturation voltage reduces power loss and improves efficiency.
- Signal processing modules in industrial control systems needing reliable transistor performance at moderate frequencies.
- Custom hybrid integrated circuits that require bare transistor dies for optimized layout and thermal management.
JANKCDP2N5154-Transistor-Die Brand Info
The JANKCDP2N5154-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-quality transistor dies for industrial and power electronics. This product embodies the brand??s commitment to precision semiconductor fabrication and robust device performance. Designed for professional engineers and sourcing specialists, the transistor die supports reliable and efficient circuit design, contributing to the brand??s reputation for dependable, high-performance semiconductor components.
FAQ
What is the maximum collector current rating of this transistor die?
The transistor die supports a maximum collector current of 1.5 A, allowing it to handle moderate power levels suitable for amplification and switching in industrial applications.
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Can this transistor die be used in high-frequency applications?
Yes, with a typical transition frequency of 100 MHz, this transistor die is suitable for signal processing tasks in RF and intermediate frequency ranges commonly required in industrial electronics.
What packaging format is the transistor provided in?
This device is supplied as a bare transistor die, designed for integration into hybrid modules or custom packaging solutions, enabling flexible system-level assembly and thermal management.
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How does the low saturation voltage benefit circuit efficiency?
A low collector-emitter saturation voltage reduces the voltage drop and power dissipation during transistor switching, improving overall circuit efficiency and reducing heat generation in power applications.
Is there any information on thermal management for this transistor die?
While the die itself dissipates up to 1 W, effective thermal management depends on the assembly and packaging solution. Proper heat sinking or integration into substrates with good thermal conductivity is recommended to maintain performance and reliability.
