JAN2N3585P-Transistor-PIND by JAN | High-Speed Switching Transistor | PIND Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, enhancing circuit durability.
  • The PIND package offers a compact footprint, allowing for better board-space management in dense assemblies.
  • Ideal for use in power regulation modules, it helps maintain consistent performance under varying loads.
  • Manufactured to meet strict quality standards, it delivers reliable performance over extended operational periods.
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产品上方询盘

JAN2N3585P-Transistor-PIND Overview

The JAN2N3585P-Transistor-PIND is a high-performance bipolar junction transistor designed for precision switching and amplification in industrial electronic circuits. Engineered to meet stringent military and industrial standards, this transistor offers robust electrical characteristics suitable for demanding environments. It provides reliable gain, low noise operation, and stable performance over a wide temperature range. Ideal for applications requiring consistent amplification and switching capabilities, the device ensures enhanced circuit stability and efficiency. Sourced from IC Manufacturer, this transistor supports engineers and sourcing specialists with its proven durability and compliance with quality standards.

JAN2N3585P-Transistor-PIND Key Features

  • High Current Gain: Enables efficient signal amplification, improving circuit sensitivity and response.
  • Low Noise Characteristics: Reduces signal distortion, critical for precision analog applications and reliable data transmission.
  • Wide Operating Voltage Range: Supports flexible design integration in circuits requiring varying supply voltages up to 30V.
  • Military-Grade Reliability: Meets JAN specification standards, ensuring superior performance under harsh environmental conditions.

JAN2N3585P-Transistor-PIND Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (PD) 1.0 W
DC Current Gain (hFE) 40 to 320 (typical)
Transition Frequency (fT) 50 MHz
Operating Temperature Range -55 to +125 ??C

JAN2N3585P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers superior electrical stability and enhanced gain compared to standard commercial transistors, making it ideal for precision industrial applications. Its compliance with JAN military specifications ensures higher reliability and durability under extreme temperature and voltage conditions. The device??s low noise and high-frequency capabilities provide improved accuracy and efficiency, distinguishing it from typical alternatives that may lack consistent performance in harsh environments.

Typical Applications

  • Signal amplification in industrial control systems, offering consistent gain and noise reduction for improved output accuracy.
  • Switching circuits in power management modules requiring reliable operation at varying voltages.
  • Analog signal processing in instrumentation and measurement equipment where precision and stability are critical.
  • Military and aerospace electronics, benefiting from rugged design and compliance with defense standards.

JAN2N3585P-Transistor-PIND Brand Info

The JAN2N3585P-Transistor-PIND is produced under the JAN (Joint Army-Navy) military specification, reflecting stringent quality and reliability criteria for defense and industrial markets. This transistor is designed and supplied by IC Manufacturer, a trusted source known for delivering components that meet rigorous military and industrial performance standards. The brand??s commitment to durability and electrical precision ensures the transistor consistently meets the demands of critical electronic systems.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current (IC) for this transistor is rated at 0.8 amperes, allowing it to handle moderate power levels in amplification and switching applications without compromising reliability.

Can this transistor operate in high-temperature environments?

Yes, the device supports an operating temperature range from -55??C up to +125??C, making it suitable for industrial and military applications where thermal stability is essential.

What voltage limits should be observed to avoid damaging the transistor?

The transistor??s maximum collector-emitter voltage is 30V, collector-base voltage is 40V, and emitter-base voltage is 5V. Exceeding these ratings can cause permanent damage and reduce device lifespan.

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产品中间询盘

How does the transistor??s noise performance benefit circuit design?

Its low noise characteristic reduces unwanted signal interference, which is crucial in sensitive analog circuits, improving overall signal clarity and precision in measurement and communication systems.

Is this transistor compliant with any military standards?

Yes, the JAN prefix indicates compliance with Joint Army-Navy military specifications, ensuring the component meets rigorous performance and reliability standards for defense and aerospace applications.

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