JANTX2N3585P-Transistor-PIND Overview
The JANTX2N3585P-Transistor-PIND is a high-performance NPN bipolar junction transistor designed for rugged and reliable operation in industrial and military environments. It features a robust silicon planar epitaxial structure that delivers consistent electrical characteristics with enhanced gain and breakdown voltage capabilities. This transistor is ideal for applications requiring precise switching and amplification with a collector current rating suitable for moderate power loads. Manufactured under stringent quality controls, it ensures excellent thermal stability and long service life, making it a preferred choice among engineers and sourcing specialists seeking dependable semiconductor components. For more details, visit IC Manufacturer.
JANTX2N3585P-Transistor-PIND Key Features
- High Collector-Emitter Voltage (VCEO): Supports up to 100V, enabling use in high-voltage switching and amplifier circuits with enhanced reliability.
- Collector Current (IC): Rated at 8A maximum, allowing efficient handling of moderate power loads without compromising transistor integrity.
- Gain Bandwidth Product: Offers a DC current gain (hFE) ranging from 20 to 70, providing stable amplification across a broad operating range for precision signal control.
- Low Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and reducing thermal dissipation.
- Hermetic Metal Can Package (PIND): Ensures superior environmental protection against moisture and contaminants, boosting long-term reliability in harsh industrial settings.
- Thermal Stability: Designed for operation over a wide temperature range, supporting applications in variable climates and demanding conditions.
- Military-Grade Quality: Manufactured to meet stringent military specifications, assuring consistent performance and robust durability.
JANTX2N3585P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V (max) |
| Collector-Base Voltage (VCBO) | 120 V (max) |
| Emitter-Base Voltage (VEBO) | 5 V (max) |
| Collector Current (IC) | 8 A (max) |
| DC Current Gain (hFE) | 20 to 70 (at IC = 4 A, VCE = 3 V) |
| Power Dissipation (PD) | 75 W (max) |
| Transition Frequency (fT) | 5 MHz (typical) |
| Operating Temperature Range | -65??C to +200??C |
| Package Type | Hermetic Metal Can (PIND) |
JANTX2N3585P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior high-voltage handling and current capacity compared to typical alternatives, ensuring robust performance in demanding industrial and military applications. The hermetic metal can package provides enhanced environmental protection and thermal stability, significantly improving reliability. Its low saturation voltage and wide operating temperature range enable efficient operation and long life, making it a dependable choice for engineers prioritizing durability and precision.
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Typical Applications
- Power Amplification: Suitable for audio and RF amplifier circuits requiring high voltage and current handling in rugged environments.
- Switching Circuits: Ideal for switching moderate loads in industrial control systems due to its low saturation voltage and reliable gain.
- Military Electronics: Designed to meet military specifications, it is commonly used in aerospace and defense applications demanding high reliability.
- Industrial Automation: Provides stable transistor operation for motor control, signal conditioning, and sensor interfacing in harsh conditions.
JANTX2N3585P-Transistor-PIND Brand Info
The JANTX2N3585P-Transistor-PIND is produced by reputable manufacturers specializing in high-reliability semiconductor components for industrial and military use. This transistor is part of a legacy of robust devices engineered for performance and longevity, adhering strictly to military and industry standards. The brand emphasizes rigorous quality control and hermetic packaging technologies to ensure consistent operation under challenging environmental and electrical stresses.
FAQ
What is the maximum collector current rating for this transistor?
The device is rated for a maximum collector current of 8 amperes, allowing it to handle moderate power loads effectively in various switching and amplification applications.
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What package type is used for this transistor and why is it important?
This transistor uses a hermetic metal can package (PIND), which provides superior protection against moisture, contaminants, and mechanical stress, enhancing its reliability and lifespan in harsh environments.
Can this transistor operate at high temperatures?
Yes, the transistor supports an operating temperature range from -65??C up to +200??C, making it suitable for applications with wide temperature variations and demanding thermal conditions.
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What voltage limits should be observed when using this transistor?
The maximum collector-emitter voltage is 100 volts, collector-base voltage is 120 volts, and emitter-base voltage is 5 volts. Operating within these limits ensures safe and reliable transistor performance.
What types of applications benefit most from this transistor?
This transistor is well-suited for industrial power amplification, switching circuits, military electronics, and industrial automation systems where high reliability, robust voltage handling, and stable gain are critical.
