JANKCDP2N5152-Transistor-Die Overview
The JANKCDP2N5152-Transistor-Die is a high-performance bipolar junction transistor (BJT) die designed for integration into advanced semiconductor assemblies. Engineered to deliver reliable switching and amplification capabilities, this transistor die supports precise control of current flow with low saturation voltage and high gain. Its compact die format facilitates efficient thermal dissipation and seamless embedding in custom packages or hybrid circuits. Ideal for applications requiring robust electrical characteristics combined with minimal footprint, this transistor die offers a dependable solution for industrial, automotive, and consumer electronics sectors. For detailed manufacturing and sourcing, visit the IC Manufacturer platform.
JANKCDP2N5152-Transistor-Die Key Features
- High Current Gain: Ensures efficient amplification, reducing power consumption in signal processing circuits.
- Low Saturation Voltage: Minimizes voltage drop during switching, improving overall circuit efficiency.
- Compact Die Size: Enables integration into space-constrained applications, facilitating miniaturization.
- Robust Thermal Performance: Supports stable operation under varying temperature conditions, enhancing reliability.
JANKCDP2N5152-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | Bipolar Junction Transistor (NPN) |
| Collector-Emitter Voltage (Vce) | Up to 60 V |
| Collector Current (Ic) | Max 1.5 A |
| DC Current Gain (hFE) | 70 – 200 |
| Saturation Voltage (Vce(sat)) | 0.3 V typical at Ic=500 mA |
| Transition Frequency (fT) | 100 MHz typical |
| Package Type | Die (bare semiconductor chip) |
| Operating Temperature Range | -55??C to +150??C |
JANKCDP2N5152-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current gain and lower saturation voltage compared to many discrete BJTs, resulting in enhanced switching efficiency and reduced power losses. Its bare die format enables flexible customization in packaging and integration, providing advantages in thermal management and miniaturization. The device??s stable operation over a wide temperature range ensures reliability in demanding industrial environments, giving it a performance edge over standard packaged transistors.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Power Amplification in industrial control circuits, where precise current control and high gain are critical for efficient signal processing and actuator driving.
- Switching components in automotive electronics, benefiting from the device??s robust thermal performance and current handling capability.
- Embedded transistor elements in hybrid integrated circuits for consumer electronics, supporting compact and efficient circuit design.
- General-purpose amplification and switching in communication equipment, enabling reliable signal modulation and control.
JANKCDP2N5152-Transistor-Die Brand Info
The JANKCDP2N5152-Transistor-Die is a precision semiconductor product from a leading IC manufacturer specializing in high-quality transistor dies for industrial and commercial applications. This transistor die reflects the brand??s commitment to delivering reliable, high-performance components that support advanced electronics design. The product is manufactured using state-of-the-art fabrication processes ensuring stringent quality and consistency standards, making it a trusted choice for engineers and sourcing specialists worldwide.
FAQ
What type of transistor is the JANKCDP2N5152-Transistor-Die?
This device is a bipolar junction transistor (BJT) with an NPN configuration. It is designed for applications requiring efficient current amplification and switching, typical of BJTs used in industrial and automotive circuits.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What is the maximum collector current supported by this transistor die?
The maximum collector current rating is 1.5 amperes, allowing it to handle moderate power loads within its specified voltage and thermal limits, making it suitable for various amplification and switching tasks.
Can this transistor die operate at high frequencies?
Yes, the transistor die features a transition frequency (fT) of approximately 100 MHz, enabling it to function effectively in high-frequency amplification and switching applications.
📩 Contact Us
How does the bare die format benefit circuit integration?
The bare die format allows designers to directly embed the transistor into custom packages or hybrid circuits, offering improved thermal management, reduced parasitic inductance, and the ability to optimize the die footprint within space-constrained designs.
What operating temperature range is supported by this transistor die?
The device supports a wide operating temperature range from -55??C to +150??C, ensuring reliable performance in harsh environmental conditions typical of industrial and automotive applications.
