JANTX2N6676T1-Transistor by JAN – High-Power NPN Transistor, TO-3 Package

  • This transistor controls electrical current flow, enabling efficient switching and amplification in circuits.
  • A key specification includes its voltage rating, ensuring safe operation under specified electrical loads.
  • The compact package design supports easier integration and saves valuable board space in dense assemblies.
  • Ideal for use in power regulation modules, it helps maintain stable output and protects connected components.
  • Manufactured to meet standard quality requirements, it offers dependable performance over extended use.
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JANTX2N6676T1-Transistor Overview

The JANTX2N6676T1 is a high-performance NPN bipolar junction transistor designed for demanding industrial and military applications. Featuring robust electrical characteristics and a durable hermetic metal can package, it delivers reliable switching and amplification in harsh environments. This transistor supports high voltage and current ratings, making it suitable for precision control circuits and power amplification stages. Its controlled gain and low noise attributes enable enhanced signal integrity in critical systems. For engineers and sourcing specialists seeking dependable transistor solutions, the JANTX2N6676T1 offers consistent performance backed by stringent quality standards from IC Manufacturer.

JANTX2N6676T1-Transistor Key Features

  • High voltage capability: Supports collector-emitter voltages up to 100 V, enabling operation in high-voltage switching and amplification circuits.
  • Substantial collector current: Handles continuous collector current up to 5 A, suitable for power applications requiring robust current drive.
  • Hermetically sealed metal can package: Ensures enhanced reliability and resistance to environmental factors such as moisture and contaminants.
  • High gain (hFE) range: Facilitates precise amplification control, improving circuit accuracy and stability in analog designs.

JANTX2N6676T1-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 5 A (continuous)
Power Dissipation (PC) 30 W
DC Current Gain (hFE) 40 to 160 (at IC=2A)
Transition Frequency (fT) 3 MHz (typical)
Package Hermetic TO-39 Metal Can

JANTX2N6676T1-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to standard small-signal transistors, enabling use in power-intensive and precision applications. Its hermetic metal package ensures enhanced reliability under extreme conditions, reducing failure rates. The broad gain range supports flexible circuit designs, while the robust frequency response maintains signal fidelity. These characteristics make it a preferred choice for engineers requiring durable, high-performance transistors in industrial and military-grade electronics.

Typical Applications

  • Power amplification stages in industrial control systems, where high voltage and current capabilities ensure effective signal drive and switching under demanding conditions.
  • Switching regulators and power converters, benefiting from the transistor’s high current capacity and thermal stability.
  • Military and aerospace electronic circuits requiring hermetic sealing and reliability in harsh environments.
  • Analog signal amplification in instrumentation, where low noise and stable gain improve measurement accuracy.

JANTX2N6676T1-Transistor Brand Info

The JANTX2N6676T1 is part of the JANTX series, known for rugged and reliable transistor solutions tailored to military and industrial applications. Manufactured under strict quality controls, this product ensures consistent electrical performance and environmental resilience. The brand emphasizes durability, hermetic packaging, and compliance with military standards, providing engineers with trusted components that meet rigorous operational demands.

FAQ

What type of transistor is the JANTX2N6676T1?

The device is an NPN bipolar junction transistor (BJT), designed to operate reliably in power amplification and switching roles within industrial and military-grade circuits.

What are the maximum voltage and current ratings for this transistor?

The transistor supports a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 5 A, making it suitable for high-voltage and high-current applications.

Why is the hermetic TO-39 metal can package important?

The hermetic metal can package provides excellent protection against moisture, dust, and other environmental contaminants, enhancing reliability and lifespan, especially in harsh or critical operating conditions.

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What is the typical current gain (hFE) range for this transistor?

The DC current gain ranges from 40 to 160 at a collector current of 2 A, allowing for flexible circuit design with stable amplification characteristics.

In which applications is the JANTX2N6676T1 most commonly used?

This transistor is commonly used in power amplification, switching regulators, military electronics, and precision analog signal amplification where high voltage, current capability, and reliability are essential.

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