JANKCBL2N5002-Transistor-Die Overview
The JANKCBL2N5002-Transistor-Die is a high-performance semiconductor component designed for integration in advanced electronic circuits. This transistor die delivers reliable switching and amplification functions, suited for industrial and high-frequency applications. Engineered with precise manufacturing processes, it supports efficient power management and thermal stability. The bare die format enables flexible assembly and customization in device packaging, optimizing space and performance. Sourcing specialists and engineers benefit from its consistent quality and compatibility with a range of substrates. For detailed sourcing and technical support, visit IC Manufacturer.
JANKCBL2N5002-Transistor-Die Key Features
- High switching speed: Enables efficient signal amplification and fast response times, critical for high-frequency applications.
- Compact bare die form factor: Facilitates custom packaging and integration into space-constrained designs, enhancing versatility.
- Robust thermal performance: Supports reliable operation under varying thermal loads, improving device longevity and stability.
- Optimized electrical characteristics: Ensures low leakage current and stable gain, supporting precision circuit requirements.
JANKCBL2N5002-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (Vceo) | 50 V |
| Collector Current (Ic) | 2 A (max) |
| Current Gain (hFE) | 100 ?C 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Power Dissipation (Pd) | 1 W (max) |
| Junction Temperature (Tj) | 150 ??C (max) |
| Package | Bare Die (no encapsulation) |
JANKCBL2N5002-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior switching speed and thermal reliability compared to typical discrete transistor packages. Its bare die format allows for improved integration and reduced parasitic effects, enhancing circuit efficiency. The optimized current gain and voltage ratings provide consistent performance under demanding operating conditions. These advantages make it a preferred choice in industrial and high-frequency electronics where precision and reliability are critical.
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Typical Applications
- High-frequency amplifier circuits requiring fast switching and stable gain for signal processing in communication systems.
- Power management modules where efficient switching transistors improve thermal handling and energy efficiency.
- Custom semiconductor packaging projects that benefit from bare die flexibility for compact, high-density assemblies.
- Industrial control systems demanding reliable transistor operation under variable temperature and load conditions.
JANKCBL2N5002-Transistor-Die Brand Info
The JANKCBL2N5002-Transistor-Die is produced by a leading semiconductor manufacturer known for delivering high-quality transistor dies tailored for industrial and commercial electronics. This product is engineered to meet stringent performance and reliability standards, supporting advanced electronic design requirements. The brand emphasizes precision manufacturing and thorough quality control processes, ensuring that each die meets exacting electrical and thermal specifications for professional applications.
FAQ
What is the maximum collector current rating of the JANKCBL2N5002 transistor die?
The maximum collector current rating for this transistor die is 2 amperes. This allows the device to handle moderate power levels efficiently, suitable for a variety of switching and amplification applications.
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Can the transistor die operate at high frequencies?
Yes, the transistor die has a typical transition frequency (fT) of around 100 MHz, making it well-suited for high-frequency applications such as RF amplifiers and communication circuits.
What are the thermal limits of this transistor die?
The maximum junction temperature is rated at 150 degrees Celsius, ensuring reliable operation under typical industrial thermal conditions. Proper heat dissipation strategies should be employed for optimal performance.
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Is the transistor die pre-packaged or bare?
This product is provided as a bare die with no encapsulation, offering flexibility for custom packaging and integration into specialized assemblies. This also helps reduce parasitic capacitances in sensitive designs.
What voltage can the transistor die handle between collector and emitter?
The maximum collector-emitter voltage (Vceo) is specified at 50 volts, enabling the transistor to function effectively in circuits with moderate voltage requirements.
